ZnO bilayer thin film transistors using H2O and O3 as oxidants by atomic layer deposition

Chen, Xue; Wan, Jiaxian; Wu, Hao; Liu, Chang

doi:10.1016/j.actamat.2019.11.066

Cited by 31 publications

(12 citation statements)

References 30 publications

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“…It is revealed that heterostructures could modulate electrical performance by taking advantage of both the front channel (providing high mobility) and the back channel (maintaining low off current) [27,28]. More importantly, some recent studies argue that the presence of a 2D electron gas system formed at the carefully engineered oxide heterointerface can greatly improve device mobility [24,[29][30][31][32][33]. In this review, we summarize the recent progress of solution-processed heterostructure oxide TFTs.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Zhao

Zhu

et al. 2020

Nanomaterials

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Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

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Section: Introductionmentioning

confidence: 99%

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Zhao

Zhu

et al. 2020

Nanomaterials

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“…The peak with a center frequency of 532.71 eV is attributed to impurities such as O-H groups or C-O groups. [5,31] The acceptor of oxygen vacancies (V O ) and donor state of zinc interstitials (Zn i ) determine the carrier concentration in ZnO. As shown in Figure 4a, the peak ratio of V O for H 2 O-ZnO thin films is significantly higher than that of H 2 O 2 -ZnO, which is the main reason why the carrier concentration of H 2 O-ZnO is higher than that of H 2 O 2 -ZnO.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of ALD‐ZnO Thin Film Transistor Using H₂O and H₂O₂ as Oxygen Sources

Yang

Bahrami

Ding

et al. 2022

Adv Materials Inter

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ZnO thin films are deposited by atomic layer deposition (ALD) using diethylzinc as the Zn source and H2O and H2O2 as oxygen sources. The oxidant‐ and temperature‐dependent electrical properties and growth characteristics are systematically investigated. Materials analysis results suggest that H2O2 provides an oxygen‐rich environment so that the oxygen vacancies (VO) is suppressed, implying a lower carrier concentration and a higher resistivity. The lower growth rate makes it possible for the ZnO thin films to grow along the lower surface energy direction of <002>, leading to a lower Hall mobility. Furthermore, the ZnO semiconductor is integrated into thin film transistor (TFT) devices and the electrical properties are analyzed. The TFT with H2O2‐ZnO grown at 150 °C shows good electrical properties, such as a high field‐effect mobility of 10.7 cm2 V–1 s–1, a high ratio Ion/Ioff of 2 × 107, a sharp subthreshold swing of 0.25 V dec–1, and a low trapping state (Ntrap) of 2.77 × 1012 eV–1 cm–2, which provides a new pathway to optimize the performance of metal‐oxide electronics.

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“…The optical band gap can be obtained from the light transmittance with the following two equations [17], [18]:…”

Section: Resultsmentioning

confidence: 99%

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Che

Zeng

Yang

et al. 2020

IEEE J. Electron Devices Soc.

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This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturallycooling process from 200 to 100°C , called a "temperature gradient ZnO (TG-ZnO)"). After optimized annealing treatment at 300°C , the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility (μsat) of 11.8 cm 2 /Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio (Ion/Ioff) of 1.9×10 7 , a small subthreshold swing (SS) of 175 mV/decade and a threshold voltage (Vth) of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory Ion/Ioff ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.

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ZnO bilayer thin film transistors using H2O and O3 as oxidants by atomic layer deposition

Cited by 31 publications

References 30 publications

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Characteristics of ALD‐ZnO Thin Film Transistor Using H₂O and H₂O₂ as Oxygen Sources

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

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ZnO bilayer thin film transistors using H2O and O3 as oxidants by atomic layer deposition

Cited by 31 publications

References 30 publications

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

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Characteristics of ALD‐ZnO Thin Film Transistor Using H₂O and H₂O₂ as Oxygen Sources