“…Thus, it was observed that the I-V diagrams reveal quite sharp slope breaking points [11,13], with relative steep increase of the current, suggesting that a direct tunneling mechanism is switched on beyond some voltage range. As the total dielectric thickness may be larger than 10 nm, it follows that such a peculiar behavior can be only explained by a heterogeneous composition of the gate dielectric [10,15,16]. We report in this paper an I-V analysis performed on MOS capacitors obtained by oxidation of the as-deposited Hf oxides.…”