Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Jin, Jun; Zhang, Jiaye; Kemal, Remzi E.; Luo, Yi; Bao, Peng; Althobaiti, M. G.; Hesp, David; Dhanak, Vinod R.; Zheng, Zhaoliang; Mitrović, Ivona Z.; Hall, Steve; Song, Aimin

doi:10.1016/j.jallcom.2016.02.215

Cited by 25 publications

(17 citation statements)

References 39 publications

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“…As-deposited SnO X by direct current (DC) reactive magnetron sputtering has already been verified the RS in a Ag/SnO X /ITO device by Da chen and Shi-Hua Huang, and it showed a low resistance of less than 3 kΩ and a resistance window of less than ~10 [ 13 , 14 ]. In addition, Jidong Jin et al reported that the DC-sputtered SnO X showed poor RS on the stack of an Al/SnO X /Pt device [ 15 ]. Our DC-sputtered SnO X was fabricated at room temperature and showed normal RS behavior.…”

Section: Introductionmentioning

confidence: 99%

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Park

Chung

et al. 2022

IJMS

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The attempts to devise networks that resemble human minds are steadily progressing through the development and diversification of neural networks (NN), such as artificial NN (ANN), convolution NN (CNN), and recurrent NN (RNN). Meanwhile, memory devices applied on the networks are also being studied together, and RRAM is the one of the most promising candidates. The fabricated ITO/SnOX/TaN device showed two forms of current–voltage (I-V) curves, classified as dynamic and static. It was triggered from the forming process, and the difference between the two curves resulted from the data retention measured at room temperature for 103 s. The dynamic curve shows a time-dependent change in the data, and the cause of the data preservation period was considered through X-ray photoelectron spectroscopy (XPS) and linear fitting in conduction mechanisms. To confirm whether the memory performance of the device may be implemented on the synapse, the change in the plasticity was confirmed using a rectangular-shaped pulse. Paired-pulse facilitation (PPF) was implemented, and the change from short-term potentiation (STP) to long-term potentiation (LTP) was achieved.

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Section: Introductionmentioning

confidence: 99%

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Park

Chung

et al. 2022

IJMS

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“…23 Jin et al also fabricated forming-free Al/ SnO x /Pt devices annealed in nitrogen, and explained formingfree switching due to sufficient oxygen vacancies generated in the nitrogen-annealed SnO x layer. 29 Rehman et al introduced oxygen annealing in Cu x O thin lm based devices, and found that the R on /R off ratio increased about 3 orders of magnitude. 24 Above studies demonstrated that annealing atmosphere can signicantly degrade or enhance the RS performance.…”

Section: Introductionmentioning

confidence: 99%

“…24 Above studies demonstrated that annealing atmosphere can signicantly degrade or enhance the RS performance. 24,29 However, to date, the RS studies in annealing atmosphere are focused on only one gas atmosphere or single switching parameter. 29 Few reports are found in literature on systematical investigation into the effect of annealing atmosphere (oxygen, air, nitrogen) on the RS effect.…”

Section: Introductionmentioning

confidence: 99%

Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co₃O₄ thin films prepared by a sol–gel technique

et al. 2019

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“…In our previous study, we reported that crystal structure of CeO 2 film is influenced by oxygen annealing treatment, and an amount of oxygen vacancies in the bilayer structures CeO 2 /TiO 2 and ZnO/CeO 2 films can improve the switching parameters [22,23]. Jin et al [24] found significant improvement in bipolar resistive switching characteristics after annealing at 300°C in nitrogen atmosphere. According to our previous study and literature, effect of oxygen annealing environment on resistive switching characteristics of CeO 2 -based RRAM device appears to be suitable for improving the switching parameters.…”

Section: Introductionmentioning

confidence: 97%

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

Ismail

Khan

Rahmani

et al. 2020

Mater. Res. Express

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Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization. Owing to filamentary nature of the resistive switching devices, variability of the resistive switching characteristics can be reduced by doping, where conductive filaments can easily grow due to reduction in the formation energy of oxygen vacancies. In this work, multilayer CeO 2 /Al/CeO 2 films were prepared through radiofrequency (rf) sputtering at room temperature to study the effect of oxygen annealing on the resistive switching characteristics. Device with CeO 2 /Al/CeO 2 multilayer structure after annealing exhibits reduction of defects and improved switching endurance, good data retention, and uniformity in operational parameters. The resistive switching characteristics have been simulated using space charge limited conduction and Schottky emission at high field region of the high resistance state, which is well fitted by linear curve fitting analysis. Improvement in the switching characteristics revealed that Al charge trapping layer has diffused into the CeO 2 matrix, which might have resulted in lower density of oxygen vacancies due to oxygen annealing. Experimental I-V analysis indicate that oxygen annealing is an effective approach to enhance the switching characteristics of RRAM devices.

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Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Cited by 25 publications

References 39 publications

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co₃O₄ thin films prepared by a sol–gel technique

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

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Effects of annealing conditions on resistive switching characteristics of SnOx thin films

Cited by 25 publications

References 39 publications

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Application

Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co₃O₄ thin films prepared by a sol–gel technique

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory