Effects of Al Precursors on the Characteristics of Indium–Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Lee, Seung‐Hee; Mun, Geumbi; Ko, Jong-Beom; Yeom, Hye‐In; Lee, Gwang-Heum; Shong, Bonggeun; Park, Sang‐Hee Ko

doi:10.1021/acsami.1c11304

Cited by 26 publications

(35 citation statements)

References 55 publications

(107 reference statements)

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Section: Resultsmentioning

confidence: 99%

“…This fact clearly indicated the doping of Al 3+ into the In 2 O 3 /SnO 2 layer, which reflects the high affinity of aluminum towards oxygen. 28 Simultaneously the concentration of M-OH increases. The Sn 3d 5/2 core level peak (Fig.…”

Section: Thin-film Characterizationmentioning

confidence: 99%

“…26 Such studies are meaningful in order to gain a further understanding on the influence and control-mechanisms of oxygen vacancies (V O ) which are responsible for the charge conduction in thinfilm oxide semiconductors. [27][28][29] Herein, we have investigated the influence of aluminum oxide doping on binary thin-film heterostructures composed of In 2 O 3 and SnO 2 . We have studied its influence on the TFT performance parameters of the indium oxide/tin oxide semiconducting layer structure, and have determined the conduction mechanism responsible for the transistor performance characteristics.…”

Section: Each Precursor Ismentioning

confidence: 99%

“…This is in accordance with very recent work on the plasma enhanced ALD synthesis of indium oxide/aluminum oxide binary layers, in which a similar increase with an increase of the Al 3+ incorporation is observed. 28 Thin-film device integration of the heterostacks ITAO 1-3 and determination of the conduction pathway Finally, the ITAO heterostack thin-films were integrated into TFT devices to study the influence of aluminum oxide on the transistor performance of the indium/tin oxide semiconductor stack. As Al 2 O 3 is a dielectric material with a strong metaloxygen bond, a notable suppression of the density of free charge carriers could be expected.…”

Section: Thin-film Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

2022

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Section: Resultsmentioning

confidence: 99%

Section: Thin-film Characterizationmentioning

confidence: 99%

Section: Each Precursor Ismentioning

confidence: 99%

Section: Thin-film Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

2022

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Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Li,

Ju,

Tang

et al. 2024

Adv Funct Materials

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A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high µFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration.

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Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Woo

Cho

Park

2023

Adv Materials Inter

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In particular, the high mobility of oxide semiconductors compared to amorphous Si (a-Si) is suitable for achieving highresolution, high-driving frequency displays, and the amorphous phase of oxide semiconductors can solve the issues caused by grain boundaries, which is a fatal problem of low-temperature poly-Si (LTPS). [3][4][5][6] In addition, because oxide semiconductors have high back-end-ofline (BEOL) compatibility, research on their application in memory devices is also actively progressing. [7] The extremely low off-current of oxide semiconductors can improve the retention of dynamic random-access memory (DRAM) [8,9] by lowering the charge loss through the transistor, and oxide semiconductors exhibit good compatibility with various insulating layers, allowing them to be used as semiconductor materials for NAND flash [10,11] or ferroelectric random-access memory (FeRAM). [12] For these various applications of oxide semiconductors, it is important to understand the role of the elements in oxide semiconductors to optimize the characteristics of thin films and devices. In particular, the characteristics of the devices can vary dramatically depending on the ratio of the cations in the oxide semiconductors. In the case of InGaZnO (IGZO), a representative quaternary oxide semiconductor, the role of each cation composition is already known, and studies are being conducted to determine their optimal composition. [4,[13][14][15][16] In is known to form a path for electrons to move through a large sphere-shaped 5s orbital. [14] Therefore, as the composition ratio of In increases, mobility increases; however, stability can be degraded owing to weak bonding between In and O. Moreover, Zn contributes to the formation of a network of oxide semiconductors. Finally, Ga is known as a carrier suppressor and long-range stabilizer of IGZO. [1] Ga 3+ forms a stronger chemical bond with O 2− than with Zn 2+ or In 3+ ; therefore, the oxygen vacancy (V o ), which is one of the reasons for carrier formation and instability, can be suppressed. [17] However, several issues with IGZO arise from this Ga composition. For a carrier suppressor, the binding energy between Ga and O is weak, and IGZO has a relatively narrow band gap, which causes instability under illumination. [18,19] Additionally, inexpensive carrier suppressor elements that can replace relatively expensive Ga are required. From these points of view, research on InAlZnO (IAZO) using Al as a replacement element for Ga is being conducted. [20][21][22] Oxide semiconductors are promising semiconducting materials for next-generation thin-film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as a carrier suppressor in oxide semiconductors; however, research has recently been conducted to replace it with Al, which is cheaper and forms a stronger bond with O. Deposition using plasmaenhanced atomic layer deposition (PEALD) is very useful for controlling the composition of...

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Effects of Al Precursors on the Characteristics of Indium–Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Cited by 26 publications

References 55 publications

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

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