Effective Masses in III‐V Compounds

Abstract

The problem of the valence band structure and effective masses in 111-V compounds is analysed. I t is shown that the linear terms in the energy of heavy holes are of importance and cannot be neglected. The density-of-states effective mass of heavy holes is calculated as a function of the temperahre and position of t,he Permi level. The cyclotron-resonance effective masses are also calculated for the limiting cases of heavx holes with low and high energies. The influence of the higher bands on the nonparabolicity of the conduct.ion and light-hole valence band is discussed. The effective mass of electrons and light holes as a function of concentration is calculated. The band parameters are determined by using the method proposed by Cardona [l]. Es wird dasProblem der Valenzbandstruktur und der effektiven Massen in 111-1' Verbindungen untersucht. Es wird gezeigt, dal3 die linearen Terme in der Energie der schweren Locher wesentlich sind nnd nicht vernachlassigt werden konnen. Die effektive Masse der Zustandsdichte der schwcren Locher wird als Funktion der Temperatur und Lage des Ferminiveaus berechnet,. Die effektive Masse der Zyklotronenresonanz wird fur die Grenzfalle schwercr Locher mit niedriger und hoher Energie ebenfalls berechnet. Der EinfluB hoherer .Binder auf die n'ichtparabolizitat des Leitungsbandes und dcs Valenzhandes der leichten Locher wird diskutiert. Die effektiven Massen der Elektronen und leichten Locher werden als Funktion der Konzentration berechnet. Die Randparameter werden nach der von Cardona [l] vorgeschlagenen Methode bestimmt.

Below bandgap optical absorption in tellurium-doped GaSb

“…A VBi is treated as a fitting parameter. Also, there has been a large discrepancy in the reported values of effective masses of holes in III-V compounds ( [29] and references therein). This is due to the complexity in the valence band structures.…”

Carrier compensation and scattering mechanisms in p-GaSb

“…The valence band structure of III-V compounds is usually taken to be similar to the nonquadratic warped sphere model proposed by Dresselhaus et al 27 for Ge and Si. However, Robert et al 28 have concluded that a multiellipsoidal model provides a better account of the experimental Halleffect and magnetoresistance measurements at 77 K. It has been pointed out by Kolodziejczak et al 29 that 100Ͼ(⌬E/ kT)Ͼ0.1 is the transition region between the ellipsoidal and warped sphere regions. For GaSb with ⌬EϷ20 meV, the temperature range 77-300 K is in the transition region in which the effective mass of the heavy holes varies with temperature.…”

“…Therefore, we have used the temperature dependent heavy hole density of states mass ͑see Fig. 5͒ calculated by Kolodziejczak et al 29 starting from Kane's theory. 30 In p-type III-V compounds, the dominant factors limiting mobility have been found to be acoustic, nonpolar, and polar optical phonons and ionized impurity scatterings.…”

On the Theory of Free Carrier Electro‐Magneto‐Optical Phenomena

“…Thus (33) can be divided into the two equations S(1) a P = Re 0 , + I m fJ1) a P . The integral (40) is obviously invariant with respect to a rotation of the energy ellipsoid [4]. Thus it can be expressed through the tensor components aao transformed to the principal axes a,*p. After analytical integration we obtain [4] Equation (41) determines the density-of-states effective mass in the band minimum by the relation It should be mentioned that in the last term of (43) El') is associated with different indices of the tensors uio,j$, and a :…”