Effect of vicinal substrates on the growth and device performance of quantum dot solar cells

Hubbard, Seth M.; Podell, Adam; Mackos, Chelsea; Polly, Stephen J.; Bailey, Christopher G.; Forbes, David V.

doi:10.1016/j.solmat.2012.09.026

Cited by 39 publications

(20 citation statements)

References 35 publications

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“…y c for InAs QDs on GaAs is typically 1.5-2.0ML. The surface orientation is known to affect y c for InAs QD, increasing y c for increased miscut angle [16]. The results presented here illustrate an alternative method to change y c , by depositing InAs QDs on an InGaP surface.…”

Section: Discussionmentioning

confidence: 74%

“…There is a potential benefit if this is indeed the case. If high optical quality QDs can be obtained without a WL then this approach may eliminate a major loss of carriers through WL recombination, which is a considerable drawback in the InAs/GaAs system [16]. These mechanisms are speculative at present and additional work would be required to further elucidate the actual condition at the surface.…”

Section: Discussionmentioning

confidence: 99%

“…Vicinal substrates are commonly used in the manufacturing of III-V solar cells as a means to control the morphology and ordering of the top cell InGaP [14]. The use of vicinal substrates has been shown to be successful in controlling the morphology of InAs QD on GaAs surfaces [15,16], and therefore, is expected to play a significant role in modifying the morphology of InAs QD on an InGaP surface.…”

Section: Introductionmentioning

confidence: 99%

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OMVPE of InAs quantum dots on an InGaP surface

Forbes¹,

Podell²,

Slocum³

et al. 2013

Materials Science in Semiconductor Processing

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Section: Discussionmentioning

confidence: 74%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

OMVPE of InAs quantum dots on an InGaP surface

Forbes¹,

Podell²,

Slocum³

et al. 2013

Materials Science in Semiconductor Processing

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“…41,[66][67][68] Driscoll et al 69 performed simulations on three positions for InAs QD located in the intrinsic region: (1) near the n-doped base, (2) exact center of i-region, and (3) near the p-doped emitter. 69 From the simulation, they found that J sc was nearly identical for the three positions as all were located in a high electric field region and carrier collection remained efficient for all three conditions.…”

Section: Effect Of Quantum Dot Location On Carrier Transportation Andmentioning

confidence: 99%

“…28 On the other hand, J 0 is the radiative or diffusion recombination dark saturation current, and its magnitude is basically related to the material properties such as bandgap (the lower the bandgap, the higher the J 0 ) and diffusion length (the shorter diffusion length, the higher the J 0 ). 37,40,41 The generation of defects is usually more enhanced for the InAs QDs-embedded GaAs because of the accumulated strain compared with the i-GaAs layer without QDs, which inevitably cause the increase of J 0SRH and the decrease of V oc .…”

Section: Introductionmentioning

confidence: 99%

Recent progress on quantum dot solar cells: a review

2016

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Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport

Sugiyama

Fujii

Katoh

et al. 2016

Progress in Photovoltaics

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A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime terraces, whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a wire-on-well structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice. Almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longerwavelength absorption edge, and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice.

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Effect of vicinal substrates on the growth and device performance of quantum dot solar cells

Cited by 39 publications

References 35 publications

OMVPE of InAs quantum dots on an InGaP surface

OMVPE of InAs quantum dots on an InGaP surface

Recent progress on quantum dot solar cells: a review

Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport

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