Effect of various factors on binding energy of pyramid quantum dot: pressure, temperature and impurity position

Bahramiyan, H.; Khordad, R.

doi:10.1007/s11082-013-9782-1

Cited by 25 publications

(11 citation statements)

References 31 publications

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“…This was due to the doped layer placed in front of the quantum well. Our results are in good agreement with references [22,[40][41][42]. Figure 3 shows the evolution of the Fermi level as a function of doping concentration.…”

Section: Introductionsupporting

confidence: 90%

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

Chrafih¹,

Moudou²,

Rahmani³

et al. 2019

Eur. Phys. J. Appl. Phys.

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We investigated the effect of the hydrostatic pressure on the optoelectronic properties of a quantum well (QW) based on δ-doped GaAs sandwiched by Ga1-xAlxAs. We study the case of a non-parabolic conduction band where the aluminum content is set at 30%. We perform our calculations in the context of the approximation of the envelope function formalism using the finite difference method. Results show that the transition energies decrease with the increase of the hydrostatic pressure, which causes remarkable modifications on the optical properties of the QW nanostructure. The non-parabolicity effect is more important for small QW (Lw ≤ 5nm) and less marked in narrow and large QW. In addition, we study the absorption coefficient for 8 nm/4 nm/8 nm geometry. On the one hand, the pressure increase creates a displacement of the optical absorption coefficient towards low energies and a decrease of the absorption peak value. On the other hand, the refractive index moves towards higher energies. We show that in the presence of a hydrostatic pressure and following its effect on intersubband transitions, these optical properties also depend on the dopant concentration rate and the quantum well width. Our study finds interests for the nano-fabrication of quantum wells and in particular for those used in optical and electronic applications.

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Section: Introductionsupporting

confidence: 90%

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

Chrafih¹,

Moudou²,

Rahmani³

et al. 2019

Eur. Phys. J. Appl. Phys.

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“…This is can be explained by the fact that when the impurity term is added to the Hamiltonian as a perturbation, the electron-energy decreases because of the Colombian interaction between the electron and impurity. Furthermore, H. Bahramiyan, and coworker, have demonstrated that the binding energy is larger when the impurity locates at the position of maximum probability due to the reason that the stronger Columbic coupling provided that the electronic density of probability has its maximum located exactly at the impurity-position [15]. In the same context, W.Belaid and coworkers have proved that the impact of the impurity's position is more significant in DQW in particularly for the moderate confinement regime [6].…”

Section: Resultsmentioning

confidence: 99%

Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

En-nadir

Ghazi

Jorio

et al. 2021

J. Mod. Sim. Mater.

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In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

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“…4. For a quantum dot made of GaAs, the dependencies of ε r (P, T ) and m * (P, T ) are given in Appendix B [36][37][38].…”

Section: Exact Diagonalization Methodsmentioning

confidence: 99%

“…To reproduce the experimental results of the magnetization, they found that the electron-electron interaction in the theoretical model of the QD magnetization should be taken into account. Very recently, the effects of pressure and temperature on the electronic and optical properties of a quantum dot in external magnetic and electric fields have also been considered [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

The effects of pressure and temperature on the exchange energy of a parabolic quantum dot under a magnetic field

Bzour

Shaer

Elsaid

2017

Journal of Taibah University for Science

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The combined effects of pressure and temperature on the energy levels of a parabolic GaAs quantum dot under a magnetic field have been studied. The exact diagonalization method was used to solve the two-electron quantum dot Hamiltonian and to obtain the eigenenergies. In addition, we investigated the effects of pressure and temperature on the singlet-triplet exchange energy (J = E T − E s) of the quantum dot as a function of a magnetic field. The magnetic field-parabolic confinement (ω c − ω 0) phase diagram of the quantum dot was calculated. The comparisons show that our results are in very good agreement with the previously published works.

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Effect of various factors on binding energy of pyramid quantum dot: pressure, temperature and impurity position

Cited by 25 publications

References 31 publications

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

The effects of pressure and temperature on the exchange energy of a parabolic quantum dot under a magnetic field

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