Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

Abstract

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

“…In the case of (In, Ga)N, these parameters are expressed as linear combinations of the corresponding values for InN and GaN. Within the regions of the SGQW quantum structure, their definitions are as follows [ 54 ]: where is the pressure-dependent effective mass; according to theory, it is given by the following expression [ 50 ]: where m 0 is the free electron mass and is the energy-related momentum matrix element obtained by the previous equation without pressure at , with . The numerical values of those parameters are and [ 34 ].…”

“…In the case of (In, Ga)N, these parameters are expressed as linear combinations of the corresponding values for InN and GaN. Within the regions of the SGQW quantum structure, their definitions are as follows [54]:…”

Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

“…This effect has been investigated by Elabsy [9] and Nithiananthi and Jayakumar [10] in a 𝐺𝑎𝐴𝑠/𝐺𝑎 1−𝑥 𝐴𝑙 𝑥 𝐴𝑠 quantum well, and Khordad [11] in a V-groove 𝐺𝑎𝐴𝑠/𝐺𝑎 1−𝑥 𝐴𝑙 𝑥 𝐴𝑠 quantum wire. Recently, the electronic properties were examined using different methods: Variational approach [12][13][14][15], finite element method [16,17], finite difference method [18], matrix diagonalization method [19] and density functional theory [20]. However, few papers have dealt with the electronic properties of multiple low-dimensional systems in the presence of a hydrogenic donor impurity [21][22][23][24].…”