Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Wang, Chen; Guo, Chunsheng; Zhang, Yamin; Zhu, Hongtu; Wang, Si; Chu, Daping; Li, Kai; Liu, Jin; Li, Rui; Liu, Jie; Feng, Shiwei

doi:10.1109/ted.2019.2961956

Cited by 17 publications

(15 citation statements)

References 34 publications

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“…In addition, the effect of filling voltage on the amplitude of DP3 in figure 3(c) was also consistent with the analysis, for the charge trapping in the GaN buffer was mainly affected by the drain voltage whereas the impact of gate voltage was slight [8,10,30]. It may result in the variation of the transient current or voltage and the degradation of the device performance [30,47], which deserves further investigation. As this kind of trap can be identified with the dynamic current or voltage measurement, it suggested that the transient curves analysis may be particularly effective in characterizing this kind of trap.…”

Section: T-independent Gan Buffersupporting

confidence: 85%

“…DasGupta et al [24] Current-transient method T-independent GaN buffer Wang et al [47] Current-transient method T-independent GaN buffer Our work DVT measurement T-independent Possibly GaN buffer measurement [35,42,43]. The traps were likely to be originated from the surface states and can be filled by the electrons from gate under the reverse gate voltage [44].…”

Section: T-independent Gan Buffermentioning

confidence: 84%

“…Therefore, we analyzed that this trap can be related to the electrons trapping perhaps through a tunneling process [10,46], which has been reported with the similar bias voltages applied on the GaN HEMTs [24] and may be linked to the tunneling of electrons into 2DEG states from the buffer [19,24]. This kind of trap was considered to be located in the GaN buffer [10,24,50], which may involve a bottleneck transport process in series with a detrapping process [21,47].…”

Section: T-independent Gan Buffermentioning

confidence: 87%

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Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Pan¹,

Feng²,

Li³

et al. 2022

Semicond. Sci. Technol.

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This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors (HEMTs) based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the drain voltage transients at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

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Section: T-independent Gan Buffersupporting

confidence: 85%

Section: T-independent Gan Buffermentioning

confidence: 84%

Section: T-independent Gan Buffermentioning

confidence: 87%

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Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Pan¹,

Feng²,

Li³

et al. 2022

Semicond. Sci. Technol.

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“…Then, both the drain and gate voltages were pulsed synchronously to induce carrier trapping. The ON-state filling pulse was V G = 0 V and V D = 4-8 V. The OFF-state filling pulses was V D = 0 V and V G = −4 to −8 V. Immediately after removal of the 5 s-long trapping pulse, the recovery transient caused by escaped charge carriers from the trap sites was monitored over a period of time while the measurement voltages remained fixed at V G = 1 V and V D = 0.5 V [24]. The time constant spectrum was determined via polynomial fitting of the transient curve.…”

Section: Change Of Trap Characteristics Caused By Inverse Piezoelectr...mentioning

confidence: 99%

Investigation of trap characteristics under the inverse piezoelectric effect in AlGaN/GaN HEMT devices at room temperature and low temperature

Yao

Zhu

et al. 2023

Semicond. Sci. Technol.

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Changes in the electrical properties and the trap characteristics of AlGaN/GaN high electron mobility transistors under the application of reverse bias stress at both room temperature and low temperature were investigated. When the critical stress voltage was reached, the gate current, which complied with the Poole-Frenkel conduction conditions, showed an abrupt increase. Furthermore, the magnitude of the critical stress voltage for occurrence of the inverse piezoelectric effect can be increased at 83 K. The transient current method was used to establish that the detrapping peak amplitudes of the traps increased, but the trap activation energy remained unchanged. The changes observed in both the time constant spectra and the pulsed current-voltage curves confirmed that the trap densities in the AlGaN barrier layer increased as a result of the inverse piezoelectric effect. However, the different degrees to which the numbers of traps increased at room temperature and at 83 K contributed to the occurrence of different degradations in the device.

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“…[3] Moreover, the construction of certain stress application setups makes it difficult to properly determine the mechanical effects caused by them or suggests the possibility of modifying the electrical environment of devices by mechanical elements of a system. [4,5,8] In addition, despite in-depth theoretical analyses of the measured effects, most of the applied models of electric interactions could be improved by considering the significant influence of surface states on the charge balance in the whole structure, its energetic band structure and the change in concentration of 2DEG. Likewise, some models adopt simplified material systems, that do not correspond to real structures.…”

Section: Introductionmentioning

confidence: 99%

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

Paszkiewicz

Dziedzic

2023

Physica Status Solidi (a)

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The article presents the influence of stresses on parameters of two‐dimensional electron gas (2DEG) in AlGaN/GaN High Electron Mobility Transistor (HEMT) heterostructures grown on sapphire substrate by MOVPE (Metal‐Organic Vapour‐Phase Epitaxy). The as‐grown heterostructures as well as Schottky diodes fabricated in them are subjected to compressive stress. The custom stressing system induces a homogeneous state of compressive stress in the samples without causing electrical side‐effects. Time‐dependent heterostructures characteristics of: electron concentration, electron mobility, surface resistance and band gap width after application of external stresses are measured. Additionally, in the case of the Schottky diodes, I‐V characteristics and charge flow in the contact are measured. The measurements are performed in cycles with and without applied stresses in order to determine the stability and repeatability of effects and to separate the influence of thermal and electrical factors. Electrical simulations explaining the obtained results are performed using APSYS software package. The obtained results lead to conclusions that are different to those reported in existing literature, in particular, results showing that the time‐dependence of the measured effects is essential to proper explanation of the occurring phenomenon. It is also shown that a key role in the change of 2DEG parameters and device characteristics is played by deep surface states and inter‐layer piezoelectric effects. Finally, the anisotropic character of the derived relations is demonstrated.This article is protected by copyright. All rights reserved.

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Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Cited by 17 publications

References 34 publications

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Investigation of trap characteristics under the inverse piezoelectric effect in AlGaN/GaN HEMT devices at room temperature and low temperature

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

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