Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures

Wasala, Milinda; Zhang, Jie; Ghosh, Sujoy; Muchharla, Baleeswaraiah; Malecek, Rachel; Mazumdar, Dipanjan; Samassekou, Hassana; Gaither-Ganim, Moses B; Morrison, Andrew R. T.; Lopez, Nestor-Perera; Carôzo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat

doi:10.1557/jmr.2015.364

Cited by 11 publications

(12 citation statements)

References 34 publications

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“…4 indicating that they are indeed closer to 4 layers. We have also seen that values slowly approaches to ~26cm -1 for thick samples consistent with our past results [29].…”

Section: Resultssupporting

confidence: 92%

“…Spectroscopic ellipsometry, transport, and first-principles calculations are employed to investigate the electronic properties of the large-area films. Previously we have demonstrated growth of many-layer MoS2 films with well-defined Raman peaks and photo-responsivity [29]. Here we extend and deepen the scope of the previous work.…”

Section: Introductionsupporting

confidence: 74%

“…Deposition of amorphous BN was carried out in a 1:10 N2/Ar mixture to produce stoichiometric films. Based on our prior result we concluded that high temperature growth (300C or over) could lead to unwanted interfacial layers and disordered MoS2 [29]. As we show here, an appropriate post-deposition annealing treatment following a low temperature growth (best at room temperature) leads to sharp interfaces and crystalline MoS2 X-ray reflectivity (XRR) and X-ray diffraction (XRD) patterns were evaluated using a high resolution Rigaku Smart Lab X-Ray diffractometer equipped with a channel-cut Ge (220) crystal to produce a highly monochromatic K-alpha radiation.…”

Section: Methodsmentioning

confidence: 93%

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Viable route towards large-area 2D MoS₂using magnetron sputtering

et al. 2017

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Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BNbuffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films.Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

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“…4 indicating that they are indeed closer to 4 layers. We have also seen that values slowly approaches to ~26cm -1 for thick samples consistent with our past results [29].…”

Section: Resultssupporting

confidence: 92%

Section: Introductionsupporting

confidence: 74%

Section: Methodsmentioning

confidence: 93%

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Viable route towards large-area 2D MoS₂using magnetron sputtering

et al. 2017

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“…(d) the photocurrent with respect to laser power. [115] Except using graphene as electrodes, in order to improve the performances of TMDCs, Wasala et al investigated the effects of BN on the optical properties of MoS2. [115] As shown in Fig.…”

Section: Photodetectors Based On Heterojunctions Of Tmdcs and Other 2mentioning

confidence: 99%

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

et al. 2017

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Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorptions from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

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“…49,50 The trap states on the SiO 2 substrate capture the electron-hole pairs generated by the photo power thereby reduce the photocurrent. 55 We checked the trap states in both devices by tting the photocurrent (I ph ¼ I illumination À I dark ) plotted as a function of P at V ds ¼ 0 V with the power-law equation I ph ¼ aP a , where a is a scaling constant and a an exponent, 30,56 as shown in Fig. 6(a) and (b) for device1 and device2 respectively.…”

Section: Opto-electrical Characteristics Of P-wse 2 /N-ws 2 Heterojunctionmentioning

confidence: 99%

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates

et al. 2021

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Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures

Abstract: Abstract

Cited by 11 publications

References 34 publications

Viable route towards large-area 2D MoS₂using magnetron sputtering

Viable route towards large-area 2D MoS₂using magnetron sputtering

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates

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Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures

Abstract: Abstract

Cited by 11 publications

References 34 publications

Viable route towards large-area 2D MoS2using magnetron sputtering

Viable route towards large-area 2D MoS2using magnetron sputtering

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates

Contact Info

Product

Resources

About

Viable route towards large-area 2D MoS₂using magnetron sputtering

Viable route towards large-area 2D MoS₂using magnetron sputtering

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates