A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates

Sharma, Pradeep Raj; Gautam, Praveen; Afzal, Amir Muhammad; Park, Byoungchoo; Noh, Hwayong

doi:10.1039/d1ra01231b

Cited by 7 publications

(3 citation statements)

References 63 publications

(87 reference statements)

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“…The superior photodetection performance of the In/InSe/h-BN photodetector can be attributed to the increased electron concentration after In doping, which greatly increases the probability of carrier photogeneration. The EQE of the In/InSe/h-BN photodetector is higher than that of most photodetectors based on other 2D semiconductors (Figure S14), ,− thus opening an avenue for improving the optoelectronic properties of InSe photodetectors via surface engineering.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Gao

Chen

et al. 2022

ACS Appl. Electron. Mater.

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Indium selenide (InSe) is considered an ideal two-dimensional material for infrared light detection owing to its high carrier mobility and narrow band gap. Here, we demonstrate a considerable enhancement in the performance of an InSe phototransistor via surface functionalization with an In layer. Electron mobility in InSe increased by almost 59 times after surface functionalization using a 20 nm thick In layer. Furthermore, compared with InSe/h-BN, In/InSe/h-BN-based photodetectors exhibited an almost 3-fold increase in photoresponsivity and external quantum efficiency at 940 nm owing to an enhancement of the surface charge transfer. First-principles calculation and Raman and photoluminescence spectroscopy analyses confirmed the occurrence of a considerable surface charge transfer at the In/InSe interface. The tunability of the surface transfer efficiency via doping establishes the potential of InSe for future use in optoelectronic devices based on two-dimensional materials.

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Section: Resultsmentioning

confidence: 99%

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Gao

Chen

et al. 2022

ACS Appl. Electron. Mater.

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“…Layered transition metal dichalcogenides (TMDs) stand out as an interesting family, as they adopt crystal structures in which adjacent layers are merely held together by weak van der Waals (vdW) interactions. In fact, many groups have reported successful exfoliation of TMDs with a wide range of methods. − In the early stages of Li-ion battery development, TMDs were researched as potential cathodes due to their layered structures. For example, TiS 2 was among the first materials used in Li-ion batteries, before John Goodenough discovered much more successful cathodes such as LiCoO 2 and LiFePO 4 . , TMDs are considered to be great candidates for a large variety of other applications as well, including transistors, emitters and detectors, hydrogen evolution reaction (HER) catalysts, and sensing devices. − As a low cost and nontoxic material, SnS 2 is considered a promising TMD for realizing many of the applications mentioned above. ,− SnS 2 adopts a CdI 2 -type structure (space group P 3̅ m ), possesses a band gap of 2.1–2.3 eV, and has high surface activity and sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Nanosheets via Chemical Exfoliation of K_2xMn_xSn_1–xS₂

et al. 2022

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We report two chemical routes to prepare new magnetically doped two-dimensional (2D) tin sulfides, i.e., Mn x Sn 1−x S 2 (x = 0.1−0.2), as derivatives of K 2x Mn x Sn 1−x S 2 . Initial codoping with K ensures high Mn doping in the nanosheets and is additionally aiding exfoliation. In chemical route 1, the parent compound is first reacted with a diluted HCl solution, which dissolves all K and half the Mn atoms, followed by treatment with TEAOH/methanol, which results in exfoliation. In chemical route 2, K 2x Mn x Sn 1−x S 2 is treated with I 2 in acetonitrile, leading to the removal of almost all K atoms, followed by dispersing the product in dimethylformamide, which results in partial exfoliation. The composition and structures are characterized using scanning electron microscopy, high-resolution scanning transmission electron microscopy, and selected area electron diffraction. After K removal and before exfoliation, the structure is trigonal (P3̅ m) featuring hexagonal slabs with AA stacking and appropriate interlayer space along the c axis. Upon shaking, both Mn x Sn 1−x S 2 (x = 0.1−0.2) phases can be exfoliated into thinner flakes, but nanosheets with a thickness of 2.5 nm can only be achieved via chemical route 1. Magnetic susceptibility measurements of the parent, intermediate, and restacked exfoliated products reveal that the manganese magnetic moment saturates at a moderate field, only in the exfoliated material. Mn x Sn 1−x S 2 nanosheets can be viewed as a magnetically doped derivative of SnS 2 , a material that is used as a high on/off ratio transistor, photocatalyst, and electrode material. Therefore, the new layered metal sulfides obtained here may have diverse applications in 2D magnetism, catalysis, or batteries.

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“…15 A rectification ratio greater than 10 6 was also demonstrated in a p-n heterojunction based on WS 2 and WSe 2 . 20 Furthermore, a WS 2 -based metal-semiconductor-metal (MSM) photodetector showed high detectivity beyond 10 11 Jones with selfdriven characteristics. 21 Generally, the low-dimensional TMDC layers are obtained from bulk TMDCs via mechanical exfoliation.…”

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confidence: 99%

Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching

You,

Park,

Kim

2023

ECS J. Solid State Sci. Technol.

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WS2 is an emerging semiconductor with potential applications in next-generation device architecture owing to its excellent electrical and physical properties. However, the presence of inevitable surface contaminants and oxide layers limits the performance of WS2-based field-effect transistors (FETs). In this study, the thickness of a WS2 layer was adjusted and its surface was restored to a pristine state by fabricating a recessed-channel structure through a combination of self-limiting remote plasma oxidation and KOH solution etching processes. The reaction between the KOH solution and WOX enabled layer-by-layer thickness control as the topmost oxide layer was selectively removed during the wet-etching process. The thickness of the WS2 layer decreased linearly with the number of recess cycles, and the vertical etch rate was estimated to be approximately 0.65 nm/cycle. Finally, the pristine state was recovered by removing ambient molecules and oxide layers from the surface of the WS2 channel, which resulted in a high-performance FET with a current on/off ratio greater than 106. This method, which provides a facile approach to restoring the pristine surfaces of transition-metal dichalcogenide (TMDC) semiconductors with precise thickness control, has potential applications in various fields such as TMDC-based (opto)electronic and sensor devices.

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A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates

Abstract: A few-layer WSe2/WS2 heterojunction diode on an h-BN substrate shows improved electronic and optoelectronic characteristics with a robust diode rectification ratio and photo responsivity compared to that on a SiO2 substrate.

Cited by 7 publications

References 63 publications

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Magnetic Nanosheets via Chemical Exfoliation of K_2xMn_xSn_1–xS₂

Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching

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A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates

Abstract: A few-layer WSe2/WS2 heterojunction diode on an h-BN substrate shows improved electronic and optoelectronic characteristics with a robust diode rectification ratio and photo responsivity compared to that on a SiO2 substrate.

Cited by 7 publications

References 63 publications

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering

Magnetic Nanosheets via Chemical Exfoliation of K2xMnxSn1–xS2

Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching

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A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates

Magnetic Nanosheets via Chemical Exfoliation of K_2xMn_xSn_1–xS₂