Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

Abstract

Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorptions from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

Carrier Transport and Photoresponse in GeSe/MoS2 Heterojunction p–n Diodes

“…The rise and decay times of the photoresponse were less than ≈60 ms and ≈1.1 s, respectively. The response speed of the HJ device can be further improved by using graphene as electrodes . It is noted that the decay time is much longer than the rise time, which has reported in other 2D materials based photodetectors and might be attributed to the defect state assistant recombination of the photogenerated electron–hole pairs .…”

High‐Performance, Self‐Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction

“…[5][6][7] Recently, the emergence of graphenelike semiconducting materials including black phosphorus, [8] transition metal dichalcogenides (TMDCs), [9,10] GaSe, [11,12] and InSe [13] have well remedied the zero-bandgap disadvantage and attracted tremendous attention. [5][6][7] Recently, the emergence of graphenelike semiconducting materials including black phosphorus, [8] transition metal dichalcogenides (TMDCs), [9,10] GaSe, [11,12] and InSe [13] have well remedied the zero-bandgap disadvantage and attracted tremendous attention.…”

Interfacial N→Sb Nonbonded Interaction Enhances the Photoelectronic Performance of PVP‐Capped Sb2S3 Amorphous Colloids

“…Such a two‐phase mixture exhibits a more obvious increase in photoconductive gain, particularly in the I sc value, than the a‐Sb 2 S 3 colloids (Figures and S3). Accordingly, while the a‐Sb 2 S 3 colloids used in the photodetection devices based on the photoconductive mechanism, the a‐Sb 2 S 3 +c‐Sb 2 S 3 mixture can be used in photodetectors based on both photoconductive and photovoltaic mechanisms, especially the photovoltaic mechanism for self‐powdered photodetectors (or photodiodes) that are operated at 0 V bias and without the use of external power ,. As revealed in Figure S4, a‐Sb 2 S 3 colloids exhibit good photosensitivity and photoswitch behavior of at the applied bias of 1 V, showing potential for the photoconductive optical detection application.…”