Effect of thickness on the microstructure, surface morphology and optical properties of N-incorporated β-Ga2O3 films

Optimization and modelling of preparation conditions of CuS thin films deposited by successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

“…Decrease in the band gap values with increasing the film thickness can be attributed to the improvement in the crystallinity and grain size. The negative effect of the film thickness on the band gap values is reported in some studies [18,19]. Figure 3b shows the combined effect of variables A (pH) and C (dipping cycles) on the optical band gap of the films at constant dipping time of 30 s. According to the figure, band gaps of the films increased with increasing of pH similar with Fig.…”

“…Therefore, a small change can be seen in E g value due to the improved crystallinity of the films [18]. Also the grain sizes increase with increasing the film thickness.…”

Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors

“…Another reason is that the Ga 2 O 3 films show the best crystallinity at this temperature, which could dramatically reduce the band gap. 42 The introduction of doped N atoms and variation in crystallinity of the films should be the principal factors for the change in the band gap of the Ga 2 O 3 films. The above results clearly showed that the band gap of the Ga 2 O 3 films could be controlled by the concentration of doped N atoms and growth temperature.…”

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…Meanwhile, good crystal quality, smooth surface, variable bandgap (4.75–4.88 eV), and high visible light transmittance (>80%) Ga 2 O 3 nanowires can be obtained by optimizing the film thickness and annealing conditions. 291–294 These characteristics can make N-doped Ga 2 O 3 applied in transparent electronics such as transparent conductive electrodes. Although the N atom is considered as a potential acceptor, it is found that the defect levels which the N substituted O host atom introduces are deep levels (Δ E > 2 eV).…”