Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon

Fahey, P.; Dutton, R.W.; Moslehi, Mehrdad M.

doi:10.1063/1.94445

Cited by 86 publications

(10 citation statements)

References 8 publications

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“…Consistent with stacking fault data, nitridation of SiO~ films thermally grown on Si substrate enhances diffusion of P and B and retards the diffusion of Sb dopant profiles located in the Si substrate underneath the nitroxide film (8,9). These phenomena are similar to those observed during oxidation processes (oxidation-enhanced diffusion or OED) and have been attributed to injection of silicon interstitials into the Si substrate during nitridation September 1985 of oxide (8,9).…”

supporting

confidence: 70%

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Moslehi

Han

Saraswat

et al. 1985

J. Electrochem. Soc.

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The kinetics of thermal nitridation of silicon dioxide in ammonia ambient has been studied. SiO2 films of 100-1000~ thick were thermally nitrided at 950~176 for times from 15s to 2h. Our experimental results based on etch rate and Auger electron spectroscopy measurements clearly indicate the multilayer structure of nitrided-oxide films. Nitrogenrich layers are formed at the surface and interface regions at a very early stage of the nitridation process. After a few minutes, the nitridation reaction mainly goes on in the bulk region, with the surface and interface nitrogen content remaining fairly constant. The Auger depth profiles show that the interface moves away from the nitrogen-rich layer as the nitridation proceeds. In addition, our results indicate the formation of an oxygen-rich layer underneath the nitrogenrich layer whose thickness increases with nitridation time. The formation of this oxide-like layer can be attributed to a slow oxidation of the silicon substrate at the nitroxide/silicon interface by the oxygen which is a by-product of the bulk exchange reaction between NH3 (or nitrogen containing species) and SiO2. The results of this work can be qualitatively used to explain effects such as enhanced boron and phosphorus diffusion and growth of stacking faults in the silicon substrate during nitridation of oxide.

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confidence: 70%

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Moslehi

Han

Saraswat

et al. 1985

J. Electrochem. Soc.

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“…It is of interest to know the outcome of solving these equations, since all of the phenomena outlined in the experimental section above are taken into account, and the relative importance of vacancy and interstitial mechanisms can be changed in this model by the use of concentration-dependent diffusivities for vacancy and interstitial components. -In a limited study, Fahey, Greenfield, and Dutton (1983) In assessing the validity of any proposed models for P difFusion based on profile fitting, it is seldom recognized that many of the data used for profile fitting are simply not suitable for model development by the approaches taken thus far. Specifically, it is most often the case that P concentration profiles resulting from chemical depositions have been the object of model fittings.…”

Section: Experimental Evidencementioning

confidence: 99%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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“…It has been observed that oxinitridation has similar effects as those observed for pure oxidation on the diffusion of dopants in silicon, i.e. during silicon oxinitridation processing the P or B diffusivity is enhanced and that for Sb is reduced [14,15]. Oxinitridation also causes the growth of stacking faults OSF [14,16] in a similar way as happens for conventional thermal silicon oxidation.…”

Section: Basic Considerationsmentioning

confidence: 72%

Silicon Self-Interstitial Kinetics Study by Means of Thin Membranes under Thermal Oxinitridation

Carrillo-López

Morales‐Acevedo²

1999

phys. stat. sol. (a)

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We have made a study for determining the silicon self‐interstitial diffusivity, their equilibrium concentration and their recombination velocity at SiO2/Si and Si3N4/Si interfaces in float zone and Czochralski silicon wafers. The experiments were based on monitoring the stacking fault growth/reduction kinetics at the front surface of a silicon membrane with a SiO2 or Si3N4 thin layer on top, under constant interstitial generation, by means of an oxinitridation process, at the other side of the membrane. We show that under these experimental conditions, the analysis and interpretation of the results is direct because the transport equation can be solved in a simple manner. We have achieved a very good agreement between the experimental results and the calculations made with the model and we have been able to determine values for the interstitial diffusivity, the equilibrium concentration and the recombination velocity at the SiO2/Si and Si3N4/Si interfaces.

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Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon

Cited by 86 publications

References 8 publications

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Point defects and dopant diffusion in silicon

Silicon Self-Interstitial Kinetics Study by Means of Thin Membranes under Thermal Oxinitridation

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