Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Moslehi, Mehrdad M.; Han, C. J.; Saraswat, Krishna C.; Helms, C. R.; Shatas, Steven C.

doi:10.1149/1.2114317

Cited by 62 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The rate of nitrogen incorporation decreases as nitridation proceeds, and average nitrogen concentration throughout the film, inferred from the maximum value of n r obtained, appears to be greater for thinner oxides. The refractive index data appears to correlate fairly well with the Auger-determined nitrogen contents of similarly prepared films from other studies (15,17,20,21).…”

Section: Resultssupporting

confidence: 73%

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Ruggles

Monkowski

1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

Fixed charge buildup has been studied in nitrided oxides. Oxides were grown at 1000~ in dry, wet, and HC1 containing ambients. Nitridation was carried out in pure NH:~ at temperatures from 950 ~ to 1150~ for 10, 30, 90, and 240 min. In many cases, thermal nitridation was found to cause fixed positive charge buildup in the films, resulting in negative shifts in flatband voltage. Under appropriate conditions, however, the charge buildup reverses, and VF, approaches prenitridation values as nitridation proceeds. The rates of charge buildup and subsequent relaxation are highly dependent on nitridation conditions and initial oxide thickness, with no significant dependence on oxide growth conditions. The current mode] for positive charge buildup in nitrided oxides, based on dissociation of Si-O bonds caused by hydrogen gas, is found to be incomplete and probably incorrect. Irradiation experiments were performed at doses of 104-10 ~ rad. Thermal nitridation was found to be capable of providing improved resistance to radiation-induced positive charge buildup in some cases.

show abstract

Section: Resultssupporting

confidence: 73%

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Ruggles

Monkowski

1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The thick oxide reduced the performance of the textured solar cell due to stress arising from the thermal expansion coefficient mismatch. 5,83 SiON was chosen as a replacement film, owing to its increased resistance to HF, 84 its improved performance as a diffusion barrier, 85 and the possibility of achieving low surface state densities. 85 The films were initially thermally grown as SiO 2 and then subjected to an ammonia ambient for 10 h at 1150 C to form SiON.…”

Section: Silicon Oxynitridementioning

confidence: 99%

Comparison of TiO₂ and other dielectric coatings for buried‐contact solar cells: a review

Richards

2004

Progress in Photovoltaics

189

View full text Add to dashboard Cite

This paper compares the optical, electronic, physical and chemical properties of dielectric thin films that are commonly used to enhance the performance of bulk silicon photovoltaic devices. The standard buried‐contact (BC) solar cell presents a particularly challenging set of criteria, requiring the dielectric film to act as: (i) an anti‐reflection (AR) coating; (ii) a film compatible with surface passivation; (iii) a mask for an electroless metal plating step; (iv) a diffusion barrier for achieving a selective emitter; (v) a film with excellent chemical resistance; (vi) a stable layer during high‐temperature processing. The dielectric coatings reviewed here include thermally grown silicon dioxide (SiO2), silicon nitride deposited by plasma‐enhanced chemical vapour deposition (a‐SiNx:H) and low‐pressure chemical vapour deposition (Si3N4), silicon oxynitride (SiON), cerium dioxide (CeO2), zinc sulphide (ZnS), and titanium dioxide (TiO2). While TiO2 dielectric coatings exhibit the best optical performance and a simple post‐deposition surface passivation sequence has been developed, they require an additional sacrificial diffusion barrier to survive the heavy groove diffusion step. A‐SiNx:H affords passivation through its high fixed positive charge density and large hydrogen concentration; however, it is difficult to retain these electronic benefits during lengthy high‐temperature processing. Therefore, for the BC solar cell, Si3N4 films would appear to be the best choice of dielectric films common in industrial use. Copyright © 2004 John Wiley & Sons, Ltd.

show abstract

“…The basic principle behind nitrided oxides is the incorporation of N to strengthen the weaker bonds in the dielectric. A study of nitridation [38] revealed that N atoms initially get incorporated at the Si-Si02 interface, and the oxide surface. This makes sense thermodynamically, since this is the best way to lower the free energy of the Si-0-N system.…”

Section: A Nitridation Of Oxidesmentioning

confidence: 99%

“…Additional experience includes development engineer for Engineering MicroSimulations, Inc., 1984-1985 research engineer for the NSF Center for Robotic Systems andMicroelectronics, 1986-1988;consulatant for Computational Engineering, Inc., 1989. He has worked, on assignment from Stanford University, at the Semiconductor Process and Design Center at Texas Instruments, 1992-1993, on the development and implementation of control systems for rapid thermal processing equipment used in the Microelectronics Manufacturing Science and Technology program.…”

mentioning

confidence: 99%

Rapid thermal multiprocessing for a programmable factory for adaptable manufacturing of ICs

Saraswat¹,

Apte

Booth³

et al. 1994

IEEE Trans. Semicond. Manufact.

View full text Add to dashboard Cite

Absfruct-This paper presents an overview of research at Stanford University on the development of concepts of a programmable factory, based on a new generation of flexible multifunctional equipment implemented in a smaller flexible factory. This approach is demonstrated through the development of a novel single wafer Rapid Thermal Multiprocessing (RTM) reactor with extensive integration of sensors, computers and related technology for specification, communication, execution, monitoring, control, and diagnosis to demonstrate the programmable nature of the RTM. The RTM combines rapid thermal processing and several other process environments in a single chamber, with applications for multilayer in-situ growth and deposition of dielectrics, semiconductors and metals. Because it is highly instrumented, the RTM is very flexible for in-situ multiprocessing, allowing rapid cycling of ambient gases, temperature, pressure, etc. It allows several processing steps to be executed sequentially in-situ, while providing sufficient flexibility to allow optimization of each processing step. This flexibility is partially the result of a new lamp system with three concentric rings each of which is independently and dynamically controlled to provide for better control over the spatial and temporal optical flux profile resulting in excellent temperature uniformity over a wide range of process conditions namely temperatures, pressures and gas flow rates. The lamp system has been optimally designed through the use of a newly developed thermal simulator. For equipment and process control, a variety of sensors for real-time measurements and a model based control system have been developed. The acoustic sensors noninvasively allow a complete wafer temperature tomography under all process conditioncritically important measurement never obtained before. In an exemplary demonstration of multiprocessing, we have integrated three different processes with disparate process conditions-cleaning, thermal oxidation and CVD of silicon-sequentially in-situ. This technology integrates an entire MOS capacitor stack into one process chamber as opposed to three stand alone pieces of equipment needed in conventional technology. This will result in reduced cost of the factory, reduction in cycle time and may provide better device characteristics, since the interfaces between the semiconductor, gate dielectric and gate electrode are free of contamination from the room ambient. In general, adaptable

show abstract

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Cited by 62 publications

References 11 publications

An Investigation of Fixed Charge Buildup in Nitrided Oxides

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Comparison of TiO₂ and other dielectric coatings for buried‐contact solar cells: a review

Rapid thermal multiprocessing for a programmable factory for adaptable manufacturing of ICs

Contact Info

Product

Resources

About

Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)

Cited by 62 publications

References 11 publications

An Investigation of Fixed Charge Buildup in Nitrided Oxides

An Investigation of Fixed Charge Buildup in Nitrided Oxides

Comparison of TiO2 and other dielectric coatings for buried‐contact solar cells: a review

Rapid thermal multiprocessing for a programmable factory for adaptable manufacturing of ICs

Contact Info

Product

Resources

About

Comparison of TiO₂ and other dielectric coatings for buried‐contact solar cells: a review