2002
DOI: 10.1016/s0169-4332(01)00746-2
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Effect of the variation of film thickness on the structural and optical properties of ZnO thin films deposited on sapphire substrate using PLD

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Cited by 125 publications
(40 citation statements)
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“…Table 1 shows that both the dark current and the photocurrent of the film with 0.05 M sol is maximum indicating maximum number of charge carriers available in that film for the conduction process. It has been found that the number of defect increases with increase in the strain in the film [20,33]. Further, the increase in the defects causes an increase in the carrier concentrations [23].…”
Section: Resultsmentioning
confidence: 99%
“…Table 1 shows that both the dark current and the photocurrent of the film with 0.05 M sol is maximum indicating maximum number of charge carriers available in that film for the conduction process. It has been found that the number of defect increases with increase in the strain in the film [20,33]. Further, the increase in the defects causes an increase in the carrier concentrations [23].…”
Section: Resultsmentioning
confidence: 99%
“…The film properties are strongly dependent on the deposition process and growth conditions [13][14][15][16][17], and optical or structural heterogeneity can be generated along the growth direction [14,17]. In this research, in order to investigate these evolutions, 300-400 nm thick films were deposited under the two following procedures: (1) in one step, without interruptions, denoted as hereafter continuous process; and (2) using three deposition periods of ∼40 min, with a 5 min growth interruption between two deposition steps.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO thin films are widely used to light-emitting diodes (LED) [4], UV sensors [5,6], solar cells [7,8], surface acoustic wave (SAW) devices and optical wave-guide devices as well [9]. It is well known that ZnO thin films can be prepared by variety of techniques such as sputtering [10,11], laser ablation [12][13][14], chemical vapor deposition [15,16] and sol-gel spin-coating technique [17][18][19][20][21]. Among the above techniques, sol-gel spin-coating technique is relatively appealing and commercially favorable for the preparation of highly-oriented ZnO thin films because of its low cost, well control over the chemical composition of the thin film, the capability of preparing large-size homogeneous thin film and large freedom of choosing dopant as well.…”
Section: Introductionmentioning
confidence: 99%