2010
DOI: 10.1002/pssc.200983739
|View full text |Cite
|
Sign up to set email alerts
|

Effect of the substrate temperature on the properties of the RF sputtered TiO2 thin films

Abstract: Titanium dioxide (TiO2) thin films were deposited by RF magnetron sputtering on glass and silicon substrates at different substrate temperatures (20, 100, 200 and 300 °C). The structural and morphological characteristics of the films were investigated by X ray Diffractometry (XRD) and Atomic Force Microscopy (AFM) while the optical properties of the films were studied by optical spectroscopy. It was shown that at room temperature, TiO2 films grown on glass were amorphous following the substrate structure. At h… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
5
0

Year Published

2010
2010
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 16 publications
(22 reference statements)
1
5
0
Order By: Relevance
“…Therefore, exciton could be simply recognized through the process of an electron with an amount of energy over the bandgap or electron contain over‐limit energy. Electron might release or transfer the energy through jumping over the TiO 2 and hole can be captured by localized electrons . The PL spectra have five peaks originating nearly at 315, 324, 351, 377, and 486 nm.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, exciton could be simply recognized through the process of an electron with an amount of energy over the bandgap or electron contain over‐limit energy. Electron might release or transfer the energy through jumping over the TiO 2 and hole can be captured by localized electrons . The PL spectra have five peaks originating nearly at 315, 324, 351, 377, and 486 nm.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, influences of radiation on the electrical characteristics of MOS devices are complicated in nature [5]. Various dielectric materials such as Al 2 O 3 [6], HfO 2 [7,8], TiO 2 [9,10], La 2 O 3 [11] and ZrO 2 [12] have been studied for MOS-based technology to substitute conventional SiO 2 layer. However, there is not enough knowledge in the literature about their radiation responses.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, reactive sputtering has been used the most. The RF reactive magnetron sputtering, amongst variety of methods, is a simple process 14 but highly effective method for preparing NiO thin films owing to its easier controllability of various parameters such as power 15 , oxygen partial pressure 16 , and substrate temperature 17 . NiO thin film can be prepared in various shapes such as nanowires and nanofibers 18 , nanotubes 19 , hollow hemispheres 20 , nanoflowers 21 , cactus-like structures 22 and nanosheets 23 .…”
Section: Introductionmentioning
confidence: 99%