Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

Kaya, Şenol; Yılmaz, Ercan; Kahraman, Ayşegül; Karaçalı, H.

doi:10.1016/j.nimb.2015.06.037

Cited by 33 publications

(11 citation statements)

References 45 publications

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“…The radiation sensitivity of the capacitor depends on several factors, such as the Z eff constant of the gate oxide, electron-hole generation energy, and film quality. Compared to the literature, the sensitivities of a capacitor with 120-nm-thick Sm 2 O 3 and 140-nm-thick Al 2 O 3 are approximately 10 mV/Gy [60] and 72 mV/Gy [36], respectively. The sensitivity of the capacitor is approximately proportional to d 2 (d is the gate oxide thickness) [37]; it may be accepted that the sensitivity of the Er 2 O 3 MOS capacitor is higher than that of the capacitor with Sm 2 O 3 .…”

Section: B 60 Co Irradiation Effects On Er 2 O 3 P-mos Capacitormentioning

confidence: 67%

“…Both acceptor-and donor-like interface states can contribute to the variation of the total interface states for the 100 kHz C-V measurements and this leads to the complicated behavior of interface states depending on applied dose. However, following the acceptor-like interface states to the ac signal is hard at high-frequency measurements due to their lifetimes [12], [60]. Moreover, the density of oxide trapped charges is clearly higher than that of the interface traps.…”

Section: B 60 Co Irradiation Effects On Er 2 O 3 P-mos Capacitormentioning

confidence: 99%

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Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

Kahraman

Yılmaz

Aktağ

et al. 2016

IEEE Trans. Nucl. Sci.

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The aim of the present study is to investigate the usage of Erbium Oxide (Er2O3) as a gate dielectric in MOS-based radiation sensors. Er2O3 thin films were deposited on a p-type Si (100) substrate via RF magnetron sputtering and were annealed at 500 • C under N2 ambient. The structural properties of the Er2O3 thin films were determined via XRD, FTIR, and AFM analyses. The Erbium silicate formation was not observed in the XRD and FTIR spectra. The roughness root-mean-square was measured as 16.4 nm by the AFM analysis. Following the description of the film, the Er2O3 MOS capacitors were fabricated and irradiated by a 60 Co radioactive source in different doses varying from 4 Gy to 76 Gy. The capacitance-voltage (C-V) curves shifted to the right side compared to the ideal one in the dose range of 4-16 Gy and to the left side from 16 Gy to 76 Gy. The oxide trapped charge density increased with an increasing irradiation dose. A significant variation in the interface states densities was not observed, the value of which always remained in the order of 10 10 eV cm −2 in the studied dose range. Based on these results, it can be said that gamma radiation does not cause a significant deterioration during irradiation. The calibration curve of the capacitor was obtained from the flat band voltage shifts depending on the gamma dose. Some electrical parameters, such as the barrier height and acceptor concentration, were investigated depending on the gamma dose. The sensitivity of the capacitor was determined to be 107 mV/Gy for the dose range of 4-16 Gy and 61 mV/Gy for the dose range of 16-76. These results showed that the Er2O3 MOS capacitor was more sensitive to the gamma radiation compared to the SiO2 and Sm2O3-based capacitors.

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Section: B 60 Co Irradiation Effects On Er 2 O 3 P-mos Capacitormentioning

confidence: 67%

Section: B 60 Co Irradiation Effects On Er 2 O 3 P-mos Capacitormentioning

confidence: 99%

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

Kahraman

Yılmaz

Aktağ

et al. 2016

IEEE Trans. Nucl. Sci.

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“…However, the post deposition annealing process improves the interface quality and it is possible to fabricate the RadFET with thinner gate oxide by high-k dielectrics due to the larger charge storage capacity of the high-k MOS structure compared to the device with SiO2 [20][21]. On the other side, some experimental studies on the MOS capacitors having the oxide with high-k dielectric have shown that their responses to 60 Co gamma source are higher than traditional MOS capacitor with SiO2 gate oxide [22][23][24]. There are also studies showing that MOS capacitors with different dielectrics are less sensitive to radiation compared to the structure with SiO2 [25][26].…”

Section: Introductionmentioning

confidence: 99%

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Kahraman

Yılmaz

2017

SAÜ Fen Bilimleri Enstitüsü Dergisi

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The aim of the present study is to determine the pre-irradiation threshold voltages of the RadFET dosimeters with gate oxide composed of high-k dielectrics and compare the results with the traditional sensors, the gate oxide of which is composed of SiO2. The effects of the p + regions with different concentration, depth and length on the electrical characteristic of the RadFETs were also investigated in the study. For these purposes, Al2O3, HfO2 high-k dielectrics and SiO2 with the thicknesses of 400 nm were used as the sensitive regions of the dosimeters. The sensors were designed in the Silvaco TCAD simulation program. While the lengths of the p + regions changed the Id-Vg characteristics of the RADFETs, the depths and concentrations until a certain value of these regions did not play an important role in electrical characteristic. The lowest threshold voltages obtained from the SiO2, Al2O3 and HfO2-RadFETs were found to be-5.22,-3.63, and-3.10 V, respectively. These results demonstrated that RadFETs with high-k dielectrics may be promising candidate for the new generated dosimeters in terms of broader measurable dose range providing their radiation tests.

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“…Sm 2 O 3 films have been deposited by several methods such as atomic layer deposition, 15 metalorganic chemical vapor deposition (MOCVD), 26 pulsed layer deposition (PLD), 27 thermal evaporation, 28 vacuum evaporation, 29 resistive evaporation, 30 and direct-current (DC) and radiofrequency (RF) sputtering. [22][23][24]31,32 DC and RF sputtering deposition are usually followed by postdeposition annealing (PDA) at various temperatures in oxygen or nitrogen ambient.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Goh

Haseeb

Wong

2016

Journal of Elec Materi

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Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm 2 O 3 layers investigated. The crystallinity of the Sm 2 O 3 films and the existence of an interfacial layer were evaluated by x-ray diffraction (XRD) analysis, Fouriertransform infrared (FTIR) spectroscopy, and Raman analysis. The crystallite size and microstrain of Sm 2 O 3 were estimated by Williamson-Hall (W-H) plot analysis, with comparison of the former with the crystallite size of Sm 2 O 3 as calculated using the Scherrer equation. High-resolution transmission electron microscopy (HRTEM) with energy-dispersive x-ray (EDX) spectroscopy analysis was carried out to investigate the cross-sectional morphology and chemical distribution of selected regions. The activation energy or growth rate of each stacked layer was calculated from Arrhenius plots. The surface roughness and topography of the Sm 2 O 3 layers were examined by atomic force microscopy (AFM) analysis. A physical model based on semipolycrystalline nature of the interfacial layer is suggested and explained. Results supporting such a model were obtained by FTIR, XRD, Raman, EDX, and HRTEM analyses. Electrical characterization revealed that oxidation temperature at 700°C yielded the highest breakdown voltage, lowest leakage current density, and highest barrier height value.

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Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

Cited by 33 publications

References 45 publications

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$$\text{O}_3$ MOS Capacitors under Zero Gate Bias

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

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