Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

“…In order to optimize the interfaces, previously found conditions were applied [14]. Trimethylgallium (TMGa), trimethylindium, TBAs and TBP metalorganic precursors were used for III-V-group elements, while hydrogen-diluted disilane was used for n-doping and dimethylzinc for p-doping.…”

“…Indeed, (InGaAsP)-based devices, grown by using TBAs and TBP and showing at least comparable otherwise better performances, have been recently realized [10][11][12][13]. By employing a MOVPE reactor using TBAs and TBP precursors, we recently investigated the effects of different gas-switching sequences for the growth of multi-quantum wells (MQWs) based on the lattice-matched system InGaP/GaAs [14]. It resulted that the insertion of a few-monolayer thick GaAsP IL at the direct GaAs-on-InGaP interface and the use of proper growth interruption purges lead to optimum optical properties of the structures, by suppressing the undesired anomalous low-energy emission due to In memory effect.…”

“…[14,15] to give a complete view of the work. Optical and photoelectrical investigation on p + -MQW-n À test structure are reported, to demonstrate the feasibility of MQW structures with a consistent number of periods, as required for advanced photovoltaic applications [16].…”

A técnica de fotoluminescência aplicada à investigação de imperfeições estruturais em poços quânticos de materiais semicondutores

“…Este procedimento envolve a estabilização da superfície de GaAs durante 10 segundos com fluxo de As, e, posteriormente, uma exposição desta superfície ao fluxo de P durante 45 segundos. Desse modo, as variações se resumem nos procedimentos adotados para a primeira interface, a qual, seguindo relatos de diversos trabalhos (BEGOTTI et al, 2004), é a interface mais susceptível aos efeitos de difusão composicional no sistema GaInP/GaAs. Na amostra II-A, após a estabilização com fluxo de P por 15 segundos, a superfície do GaInP ficou exposta ao As durante 30 segundos.…”

Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE

“…A systematic study is therefore necessary to reduce this complexity and to provide insight for process improvement. For this purpose, a large number of InGaP/GaAs interfaces have been extensively researched [9][10][11][12][13]. Basically, to control the effective band-gap energy, fabrication of quantum well structures with an abrupt hetero-interface is crucial for controlling the quantum effects.…”