Effect of the Change of Deposition Time on the Secondary Direction and Abnormal Shape of Grains Growth of SnO₂Thin Films

Abstract

SnO2thin films were grown on Si substrate using the low pressure chemical vapor deposition method. Observations made through electron microscopy indicate that thin films tend to grow with a constant direction when deposited at a temperature of 420°C for 5, 10, 20, or 30 min. However, when the deposition time increases, the particles forming the thin films are subject to a secondary growth. Observations made under a high-resolution transmission electron microscope reveal the lattice shape characteristic of thin films, with an overlapped or wrinkled flower form, and indicate that thin films growth takes place in different directions during the secondary growth. Measurements of the Hall effect show that the carriers mobility in the thin films increases linearly with the deposition time, whereas the carrier density decreases. The Hall Rh value increased linearly until 20 min deposition time, whereas for thin film grown for 30 min it decreased rapidly, showing a relatively similar behaviour to the carrier density. This is because as the deposition time becomes longer, the second growth and atypical shape occurs, leading to an increase of the thin films Rh value. This phenomenon indicates that the deposition time of thin films affects their carrier density and atypical overlapped or wrinkled flower form.

Electrochemical Deposition of CsPbBr3 Perovskite for Photovoltaic Devices with Robust Ambient Stability

“…Nevertheless, the increase of Pb particle size can still induce other effects in the horizontal direction, that is, certain stress can be generated and therefore more interfacial defects or even certain film deformation could result (which can be referred to from Figure S4 in the Supporting Information). Furthermore, some structural change also emerges with the deposition time of Pb, as shown in the XRD pattern in Figure c. For t Pb < 400 s, only pure CsPbBr 3 phase is detected.…”

Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films

“…Jeong et al [ 10 , 11 ] reported that the growth direction of the thin film may change according to the initial growth conditions of thin films. The initial growth condition can be an important parameter in the grain growth of thin films, and changes in the growth surface of the thin film will change the particle shape, particle size, and electrical characteristics of the thin film [ 12 ].…”