Effect of surface oxide on transport properties in a-Si:H

Aker, B.; Peng, Sheng; Cai, Song-yi; Fritzsche, H.

doi:10.1016/0022-3093(83)90632-4

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Surface Band Bending ± Photosaturation1

W Fuhs Et Al Metastable Effects In Silicon1

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1985

1999

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Cited by 18 publications

(2 citation statements)

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“…In yet a third group of studies, photosaturation was obtained for some, but not all, surface conditions [412,556,558,561,575]. This third kind is the most interesting, as it provides a key for understanding the effects which govern the elusive photosaturation behavior.…”

Section: Surface Band Bending ± Photosaturationmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,517

804

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Section: Surface Band Bending ± Photosaturationmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,517

804

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“…AKER et a]. [18] have reported on a similarly large increase of od in p-type, singly boron doped a-Si : H films and have shown that this behaviour was related to the presence of a negatively charged surface oxyde. Since the above effect has been observed in both p-type and n-type compensated saniples, it appears unlikely that it is caused by light induced changes of the charge on the surface oxide.…”

Section: W Fuhs Et Al Metastable Effects In Siliconmentioning

confidence: 93%

Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)

et al. 1985

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A b s t r a c t . Light induced changes of electronic properties are studied in glow discharge deposited a-Si: H-films by ESR, field effect, DLTS and elect,ronir transport. These effects are caused by silicon da,ngling bonds generated by recombination processes, which raise the density of states near midga,p. The concomitant, increase of potential fluctuations indicates that these defects are inhomogeneously distribnted. Licht-induzierte metastabile Effekte in hydrogenisiertem amorphem Silizium (a-Si : H)Inlial t s u bersicht. Es wird uber Licht-induzierte Anderungender elektronischenEigenscha.ft.en von a&: H-Filmen berichtet. Dazu wurde der EinfluD liingerer Belichtung auf ESR, Feldeffekt, DLTS und Transporteigenschaftsn untersucht. Die metastabilen Effekte entstehen durch freie Si-Bindungen, die bei der Rekombination gebildet werden und zu einer Erhohung der Zustandsdiclite nahe der Mitte der verbotenen Zone fuhren. Die dabei auftretende Verstarkung von Potentialfluktuntionen dentet darauf hin, daB diese Defekte inhomogen verteilt sind.

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Amorphous silicon (a-Si) transport properties, general

Landolt-Börnstein - Group III Condensed Matter

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Effect of surface oxide on transport properties in a-Si:H

Cited by 18 publications

References 5 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)

Amorphous silicon (a-Si) transport properties, general

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