Effect of substrate temperature on the microstructure and transport properties of highly (100)-oriented LaNiO3−δ films by pure argon sputtering

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

“…Atomic force microscopic analysis was employed to characterize surface morphology; the average grain size of the LNO thin films was 200 nm. Liang and Xiaofang [43] investigated the growth mechanism of LNO films on single crystal (1 0 0) silicon substrates fabricated by RF magnetron sputtering method. The authors reported that the LNO film deposited at 400 1C shows an amorphous structure without grains on the surface, while grains with an average size of 8 nm, 25 nm, 36 nm and 43 nm were observed to LNO films deposited at 500 1C, 600 1C, 700 1C and 800 1C, respectively.…”

Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films

“…The increase in these defects would expand the lattice constant, and hence result in the low angle-shift of XRD peaks. Otherwise, lower T s would benefit the generation of strains in films and formation of dislocations between a film and a substrate, which might contribute to the shift as well [24,25]. Utilizing the (0 0 0 2) peaks of XRD patterns shown in Fig.…”

Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

“…1(a) shows the XRD patterns of LNO films with different thickness on Si substrates. It is seen that the LNO films of all thicknesses exhibit preferred (100)-orientation [10,11]. With increasing the film thickness from 100 nm to 400 nm, the intensity of the LNO (200) peak gradually increases and the full width at half maximum (FWHM) decreases, indicating that the crystallinity of the film has been improved and the grain size is enlarged.…”