Effect of substrate bias voltage and substrate temperature on the physical properties of dc magnetron sputtered SnO2 thin films

Prathyusha, T.; Srikanth, T.; Reddy, A. Sivasankar; Reddy, P. Sreedhara; Reddy, Ch. Seshendra

doi:10.1016/j.ijleo.2016.07.005

Cited by 20 publications

(8 citation statements)

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“…It found several technological applications including; solar cells [5], low emissivity coatings for windows [6], gas sensors [7], and liquid crystal displays [8]. Several methods were used for FTO films deposition such as: chemical vapor deposition (CVD) [9] [10], sputtering [11] [12] [13], plasma evaporation [14], ultrasonic spray pyrolysis (USP) [15] [16] and sol-gel method (spin or dip coating) [17] [18]. Sol-gel process is more advantageous than the other methods due to its low-cost, simplicity and the possibility of films deposition onto large and complex shaped substrates.…”

Section: Introductionmentioning

confidence: 99%

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Adjimi¹,

Zeggar²,

Attaf³

et al. 2018

JCPT

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In the present work, undoped (SnO 2) and fluorine-doped tin oxide (FTO) thin films were prepared by sol-gel process using a solution composed of (SnCl 2 , H 2 O), (NH 4 F), and ethanol mixture. The fluorine concentration effect on structural, optical and electrical properties of SnO 2 films is investigated. The electrical properties of FTO films prepared by sol gel remain relatively lower than the ones deposited by other techniques. In present paper, we try to elucidate this difference. Films composition and the FTIR analysis, of films and formed precipitate during film growth, indicate that few amounts of fluorine are incorporated in SnO 2 network, most of fluorine atoms remain in the solution. The films resistivity is reduced from 1.1 Ω•cm for undoped films to 3 × 10 −2 Ω•cm for 50 wt.% doped FTO, but remains higher than the reported ones in the literature. This high resistivity is explained in terms of fluorine bonding affinity in the solution.

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Section: Introductionmentioning

confidence: 99%

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Adjimi¹,

Zeggar²,

Attaf³

et al. 2018

JCPT

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“…Moreover, the change of bias duty ratio affects the direction of film growth. [ 20,40 ] When the duty cycle of bias is 71.2%, the peak of HfO 2 plane (002) at 35.2° appears. With the rise of bias duty ratio, the energy of ions bombardment is raised, leading to the high energy of film surface.…”

Section: Resultsmentioning

confidence: 99%

“…The film growth process can be therefore affected in terms of etching rate, adhesion, density, surface morphology, crystal size, and preferred orientation, which affects the total energy transferred to the substrate during deposition and alters the growth process. [ 19,20 ] Film roughness and grain size, changed by substrate bias, influence the leakage current. So, it is significant to investigate the effect of substrate bias on the leakage current of hafnium oxide films.…”

Section: Introductionmentioning

confidence: 99%

Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO₂ Thin Films Deposited by Reactive Magnetron Co‐Sputtering

Zhang

Zhou

Sun

et al. 2021

Adv Elect Materials

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HfO2 thin film has been widely studied as the most promising candidate material for microelectronic devices. However, low leakage current density is the prerequisite for the excellent performance of devices. Therefore, effects of substrate bias duty ratio and frequency on the roughness and leakage current density are studied for the Y:HfO2 thin films deposited by reactive magnetron co‐sputtering method. The results illustrate that the substrate bias duty ratio and frequency influence the leakage current density through grain size and roughness of films. An appropriate substrate bias is beneficial to the densification of films and the reduction of leakage current. When the substrate bias duty cycle is 30.1% at the frequency of 19.7 kHz, the roughness and leakage current density of films are reduced to 0.4 nm and 8.8 × 10−8 A cm−2, respectively.

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“…FTO thin films have several technological applications like solar cells, low emissivity coatings for windows, gas sensors, and liquid crystal displays [7][8][9]. Several methods were used to prepare and deposit FTO films such as chemical vapor deposition (CVD), sputtering, plasma evaporation, sol-gel method and spray pyrolysis [10][11][12][13]. Spray pyrolysis has received more attention than the other methods due to its low-cost, simplicity, mass production with ease preparative parameters and the possibility of films deposition onto large and complex shaped substrates.…”

Section: Introductionmentioning

confidence: 99%

FTO Thin Films: Outcome of Substrate Temperature on the Structural and Optical Properties

Suresh

T²,

Yogeshwaran³

et al. 2022

Front. Adv. Mater. Res.

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In this work, Fluorine doped Tin Oxide (FTO) thin films are effectively deposited by JNSP technique using ammonium fluoride and tin chloride as solution composition. The influence of Substrate Temperature (ST) on the structural and optical properties of FTO thin films is investigated. XRD pattern authenticates the presence of single phase polycrystalline orthorhombic structure with favored orientation along (230) and (200) directions. The sharp band obtained between 475 and 700 cm-1 originated from asymmetric stretching vibrations of metal oxide (SnO2:F). The highest band gap energy was obtained as 3.57 eV at 425°C and lowest band gap energy was obtained as 3.49 eV at 450°C obtained from UV-Vis spectra.

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Effect of substrate bias voltage and substrate temperature on the physical properties of dc magnetron sputtered SnO2 thin films

Cited by 20 publications

References 18 publications

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO₂ Thin Films Deposited by Reactive Magnetron Co‐Sputtering

FTO Thin Films: Outcome of Substrate Temperature on the Structural and Optical Properties

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Effect of substrate bias voltage and substrate temperature on the physical properties of dc magnetron sputtered SnO2 thin films

Cited by 20 publications

References 18 publications

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Fluorine-Doped Tin Oxide Thin Films Deposition by Sol-Gel Technique

Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO2 Thin Films Deposited by Reactive Magnetron Co‐Sputtering

FTO Thin Films: Outcome of Substrate Temperature on the Structural and Optical Properties

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Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO₂ Thin Films Deposited by Reactive Magnetron Co‐Sputtering