Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO₂ Thin Films Deposited by Reactive Magnetron Co‐Sputtering

Abstract

HfO2 thin film has been widely studied as the most promising candidate material for microelectronic devices. However, low leakage current density is the prerequisite for the excellent performance of devices. Therefore, effects of substrate bias duty ratio and frequency on the roughness and leakage current density are studied for the Y:HfO2 thin films deposited by reactive magnetron co‐sputtering method. The results illustrate that the substrate bias duty ratio and frequency influence the leakage current density through grain size and roughness of films. An appropriate substrate bias is beneficial to the densification of films and the reduction of leakage current. When the substrate bias duty cycle is 30.1% at the frequency of 19.7 kHz, the roughness and leakage current density of films are reduced to 0.4 nm and 8.8 × 10−8 A cm−2, respectively.

Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

“…The chemical composition of the elements at the interface was further analysed using the x-ray photoelectron spectroscopy (XPS). The bonding energy of the deconvoluted O 1s peak at 528.4 eV specifies the Hf-O bonding at the interface, and the peak at 529.4 eV specifies that the metal oxide bonding at the HfO x /AlO x interface possibly arises due to the very thin AlO x layer [41,42]. The formation of a thin AlO x layer at the SL/TE interface has been further verified from the TEM image.…”

Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application

“…The low-energy peaks of Hf 4f 5/2 and Hf 4f 7/2 at 15.1 and 13.4 eV correspond to the Hf metallic state, respectively. 46,47 We have also calibrated the full width at half- with a σ HRS ∼ 1.38 × 10 −10 at 0.1 V read voltage (V read ). We have also estimated the coefficient of variance (σ/μ) at around 6.32% for the HRS and 0.27% for LRS, respectively.…”

“…The doublet peak of the Hf 4f 5/2 and Hf 4f 7/2 states at 18.6 and 16.8 eV indicate the formation of nonstoichiometric HfO x , respectively. The low-energy peaks of Hf 4f 5/2 and Hf 4f 7/2 at 15.1 and 13.4 eV correspond to the Hf metallic state, respectively. , We have also calibrated the full width at half-maximum (fwhm) values of 1.40 and 2.21 at 529.2 and 529.8 eV from the O 1s spectra, respectively. These fwhm values indicate the sufficient amount of oxygen vacancies (V O ) in the switching layer and interfacial layer.…”

Effect of Substrate Negative Bias on the Microstructural, Optical, Mechanical, and Laser Damage Resistance Properties of HfO2 Thin Films Grown by DC Reactive Magnetron Sputtering

“…Comparatively, uniform and dense films with stable components and high purity can be obtained and the metal electrodes prepared synchronously by using the magnetron sputtering technique. The quality of films can be optimized further by adjusting the working pressure, target power, gas ratio, substrate temperature, and negative bias [ 19 ].…”