Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

“…On the other hand, it has been stated that specific numerous cluster-like defects are created in Cz-Si subjected to the HP-HT treatment at 1120±1400 K [3,8]. Such specific oxygen related defects remained to be distributed in pSi after anodization and could be responsible for quenching of pSi PL (compare [9]).…”

“…1). XRSM of pSi prepared from the substrates HP-HT treated at 1230 K at 1 GPa indicated much enhanced isotropic diffuse scattering suggesting the presence of very small oxygen clusters [3] in pSi and of isotropic pores [5]. These results well correlate with the absorption measurements (a distinct absorp- tion line at %1230 cm ±1 was observed which is related to the presence of small plateletor spherical-like oxygen precipitates) [6].…”

“…Similar annealing of Cz-Si but under stress exerted by enhanced hydrostatic pressure of the gas ambient (HP-HT treatment), results in even more pronounced stress-stimulated oxygen precipitation [2]. Cz-Si treated at HP-HT indicates typically the presence of different, more numerous defects [3]. The pronounced effect of HP-HT treatment on the PL of pSi prepared on such Cz-Si substrate has been recently reported [1].…”

Oxygen precipitation and creation of defects in neutron irradiated Cz‐Si annealed under high pressure

“…1 Introduction Oxygen precipitation and creation of extended defects such as dislocations in oxygen containing Czochralski grown silicon (Cz-Si) are markedly affected by the enhancement of hydrostatic pressure (HP) exerted by inert argon ambient during anneals at high temperatures (HT). Oxygen removal from the interstitial positions (oxygen precipitation) is strongly enhanced under HP, especially at about 1270 K [1]. High uniform stress results in the increased effective radius of oxygen interstitial (O i ) interaction with nucleation centre for oxygen precipitation and yields a lower pre-exponential factor of the diffusion coefficient of oxygen due to O i capture by nucleation centres [2].…”

The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

“…In addition, the application of high hydrostatic pressure can induce [9] changes in the structure of defects. Thermal treatments under high hydrostatic pressure reduce [10] significantly the concentration of oxygen, thus enhancing the formation of thermal donors at 450 • C and promoting oxygen precipitation at 650 • C. We note that oxygen dimer, which is the first stage of oxygen precipitation process, is not expected [11] to survive at the above temperatures. Thus, the formation of the VO 2 defect as a result of the reaction V + O 2 → VO 2 is not expected to occur in irradiated Si initially subjected to thermal treatment under high hydrostatic pressure.…”