2010
DOI: 10.2320/matertrans.m2009183
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Sputtering Power on the Nucleation and Growth of Cu Films Deposited by Magnetron Sputtering

Abstract: Cu thin films were deposited on Si(100) substrates using direct current (DC) magnetron sputtering. We focused on the effect of sputtering DC power on the electrical, structural properties, and the nucleation and growth of Cu films during the initial stage of sputtering. The Cu films deposited at higher sputtering power showed strong crystallinity, low electrical resistivity in comparison with the Cu films deposited at lower sputtering power. Concerning the nucleation and growth of Cu films during initial stage… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

2
34
0
5

Year Published

2015
2015
2023
2023

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 80 publications
(45 citation statements)
references
References 17 publications
2
34
0
5
Order By: Relevance
“…In the literature, a lot of studies focus on the evolution of copper microstructure as function of the deposition method and its process parameters variations, especially for DC magnetron sputtering. Studies on the resistivity evolution as function of film thickness or process parameters are also found [5,18,23,24,37,38]. However, crystallite size and/or crystallinity and film texture are not always specified.…”
Section: Electrical Resistivitymentioning
confidence: 99%
See 1 more Smart Citation
“…In the literature, a lot of studies focus on the evolution of copper microstructure as function of the deposition method and its process parameters variations, especially for DC magnetron sputtering. Studies on the resistivity evolution as function of film thickness or process parameters are also found [5,18,23,24,37,38]. However, crystallite size and/or crystallinity and film texture are not always specified.…”
Section: Electrical Resistivitymentioning
confidence: 99%
“…A summary diagram of resistivity data as function of the crystallite size and the deposit technique is reported in Fig. 3 [5,22,23,[37][38][39][40][41][42][43]. Resistivity values for very thin films obtained by thermal evaporation [39], using electroplating [41] and electroless plating [42] are also reported.…”
Section: Electrical Resistivitymentioning
confidence: 99%
“…Coating growth depends on a number of process parameters, including substrate bias, deposition temperature, chamber pressure, etc. Sputtering power as a process parameter influences the coating growth, electric resistance, surface roughness [35], mechanical and tribological properties [36]. Past research proved that high metal ionization results from increased sputtering power, eventually affecting coating growth.…”
Section: Introductionmentioning
confidence: 99%
“…The rough surface that appears clearly in the AFM image could be caused by an island growth mode at the sputtering condition. [34] In contrast, the CuN film exhibits a very flat surface with R a ≈ 0.3 nm and P-V ≈ 2.8 nm, which is similar to the optimally flat surface with R a ≈ 0.35 nm for CPP-GMR devices. [11] The significant reduction in roughness can be due to the improved lattice matching with the MgO substrate and/or the modification of the surface and interfacial energies by the N 2 gas.…”
Section: Wwwadvelectronicmatdementioning
confidence: 79%