Cu thin films were deposited on Si(100) substrates using direct current (DC) magnetron sputtering. We focused on the effect of sputtering DC power on the electrical, structural properties, and the nucleation and growth of Cu films during the initial stage of sputtering. The Cu films deposited at higher sputtering power showed strong crystallinity, low electrical resistivity in comparison with the Cu films deposited at lower sputtering power. Concerning the nucleation and growth of Cu films during initial stage of magnetron sputtering, it was found that the progress of the nucleation and growth of the Cu films at higher sputtering is much faster than those of the Cu films at lower sputtering power even though they have a similar nucleation and growth mechanism, and their relation to resultant microstructure was confirmed by atomic force microscopy.
A ceramic-lined steel pipe has been prepared by the thermit reaction of aluminum-ferric oxide under centrifugal force with the partial replacement of aluminum by the silicon sludge obtained from a semiconductor wafer cutting processing. The ceramic layer on the pipe inner surface consists of the crystalline structures of mainly corundum (-Al 2 O 3 ) and hercynite (FeAl 2 O 4 ). The sludge replacement increases the layer density from 2.9 g/cm 3 to 3.5 g/cm 3 and the hardness from 1450 Hv to 1780 Hv. The amorphous phases of mullite (Al 6 Si 2 O 13 ) formed between the crystalline structures are found to be responsible for a significant improvement of the ceramic layer density.
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