Effect of sodium on material and device quality in low temperature deposited Cu(In,Ga)Se2

Puttnins, S.; Levcenco, Sergiu; Schwarzburg, Klaus; Benndorf, G.; Daume, F.; Rahm, A.; Braun, Anika; Grundmann, Marius; Unold, Thomas

doi:10.1016/j.solmat.2013.08.029

Cited by 34 publications

(19 citation statements)

References 19 publications

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“…In 1997, a model was presented describing that by adding Na to CIGSe the number of acceptors does not change but the number of donors is dramatically reduced, thereby changing the compensation level [11]. This model has since then been supported by several other studies [9,[12][13][14][15][16][17].…”

Section: Sodium In Cigse Solar Cellsmentioning

confidence: 94%

Incorporation of alkali metals in chalcogenide solar cells

Salomé

Rodríguez-Alvarez

Sadewasser

2015

Solar Energy Materials and Solar Cells

125

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Section: Sodium In Cigse Solar Cellsmentioning

confidence: 94%

Incorporation of alkali metals in chalcogenide solar cells

Salomé

Rodríguez-Alvarez

Sadewasser

2015

Solar Energy Materials and Solar Cells

125

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“…Intensity-dependent minority carrier lifetimes consistent with SRH recombination have been reported for CIGSe. [45] Alternatively, an exponential decay of Δn(t) can be the result of minority carrier detrapping, [27] detailed in Section 2.5.…”

Section: Intensity-dependent and Spectrally Resolved Trplmentioning

confidence: 99%

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Hages

Redinger

Levcenko

et al. 2017

Advanced Energy Materials

117

150

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Time‐resolved photoluminescence (TRPL) is a powerful characterization technique to study carrier dynamics and quantify absorber quality in semiconductors. The minority carrier lifetime, which is critically important for high‐performance solar cells, is often derived from TRPL analysis. However, here it is shown that various nonideal absorber properties can dominate the TRPL signal making reliable extraction of the minority carrier lifetime not possible. Through high‐resolution intensity‐, temperature‐, voltage‐dependent, and spectrally resolved TRPL measurements on absorbers and devices it is shown that photoluminescence (PL) decay times for kesterite materials are dominated by minority carrier detrapping. Therefore, PL decay times do not correspond to the minority carrier lifetime for these materials. The lifetimes measured here are on the order of hundreds of picoseconds in contrast to the nanosecond lifetimes suggested by the decay curves. These results are supported with additional measurements, device simulation, and comparison with recombination limited PL decays measured on Cu(In,Ga)Se2. The kesterite material system is used as a case study to demonstrate the general analysis of TRPL data in the limit of various measurement conditions and nonideal absorber properties. The data indicate that the current bottleneck for kesterite solar cells is the minority carrier lifetime.

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“…The net carrier density in CZTS bulk was derived from C-V scans with different frequencies as shown in Figure 2a. Several papers have reported that in polycrystalline materials, the presence of deep level defects can well enhance the capacitance response at inappropriate low frequencies resulting in misleading interpretation of net carrier density [20][21][22]. When AC angular frequency is slow enough, deep level defects could have sufficient time to respond, thereby adding enormous amount of extra charge to thin film [20].…”

Section: C-vmentioning

confidence: 99%

Sentaurus modelling of 6.9% Cu2ZnSnS4 device based on comprehensive electrical & optical characterization

Yan

et al. 2017

Solar Energy Materials and Solar Cells

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In this work we perform comprehensive characterization on a 6.9% pure sulphide Cu 2 ZnSnS 4 (CZTS) device and construct a 2D device model in Sentaurus TCAD to identify possible roots of performance bottlenecks. Electrical and optical parameters of the absorber from comprehensive electrical and optical characterization, together with other necessary parameters from literature, we successfully reproduce measured current density-voltage (J-V) and external quantum efficiency (EQE) curves. Absorption coefficient is extracted by fitting measured internal quantum efficiency (IQE). At the buffer/absorber interface, a surface recombination velocity of 1×10 5 cm/s is identified to adequately describe measured spectral response at the near-interface region. Furthermore, a bulk lifetime of ~29 ns is extracted from effective lifetime modelling in conjunction with time resolved photoluminescence (TRPL) results. The key underlying V oc deficit, ~200 mV, is pinpointed to bandgap fluctuation, which is backed by the simulation study on both QE tail and steady state photoluminescence.

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Effect of sodium on material and device quality in low temperature deposited Cu(In,Ga)Se2

Cited by 34 publications

References 19 publications

Incorporation of alkali metals in chalcogenide solar cells

Incorporation of alkali metals in chalcogenide solar cells

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials

Sentaurus modelling of 6.9% Cu2ZnSnS4 device based on comprehensive electrical & optical characterization

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