Incorporation of alkali metals in chalcogenide solar cells

Salomé, Pedro M. P.; Rodríguez-Alvarez, H.; Sadewasser, Sascha

doi:10.1016/j.solmat.2015.06.011

Cited by 123 publications

(97 citation statements)

References 135 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1,2] In standard coevaporation process of CIGS using soda-lime glass (SLG) substrates, Na is introduced during CIGS growth by diffusion from the heated SLG substrate (>600 °C) through the Mo back contact. [15][16][17] Two different mechanisms have been proposed, assuming that the Na (K) dopants stay at the grain boundary and in the CIGS grains, respectively. [5,6] Although it is widely believed that the beneficial effect of Na (K) results partially from the enhanced p-type conductivity inside the absorber layer which can contribute to higher opencircuit voltage (V oc ), [7][8][9][10][11] why the Na or K [12][13][14] incorporation enhances the p-type conductivity is not well understood.…”

Section: Doi: 101002/aenm201601191mentioning

confidence: 99%

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Yuan

Chen

Xie

et al. 2016

Advanced Energy Materials

123

111

View full text Add to dashboard Cite

show abstract

Section: Doi: 101002/aenm201601191mentioning

confidence: 99%

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Yuan

Chen

Xie

et al. 2016

Advanced Energy Materials

123

111

View full text Add to dashboard Cite

show abstract

“…In general, chalcogenide materials can be used for memory-switching applications [4,5], phase-change materials [6,7], and solar applications [8].…”

Section: Vacuum Thermal Evaporation Techniquementioning

confidence: 99%

Advance Deposition Techniques for Thin Film and Coating

Jilani¹,

Abdel-wahab²,

HosnyHammad³

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

View full text Add to dashboard Cite

Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.

show abstract

“…[12][13][14][15][16][17] The most common approach for the incorporation of alkali atoms in CIGS layer was their natural diffusion from SLG substrate which contained Na and sometimes also K. 18,19 The incorporation of alkali atoms could greatly enhance both the structural and the electrical properties of CIGS absorber materials in comparison with the sodium-free glass. [12][13][14][15][16][17] The most common approach for the incorporation of alkali atoms in CIGS layer was their natural diffusion from SLG substrate which contained Na and sometimes also K. 18,19 The incorporation of alkali atoms could greatly enhance both the structural and the electrical properties of CIGS absorber materials in comparison with the sodium-free glass.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15][16][17] The most common approach for the incorporation of alkali atoms in CIGS layer was their natural diffusion from SLG substrate which contained Na and sometimes also K. 18,19 The incorporation of alkali atoms could greatly enhance both the structural and the electrical properties of CIGS absorber materials in comparison with the sodium-free glass. 19,21,22 However, excessive Na diffusion from the SLG substrate not only hindered the grain size of CIGS film but also degraded its electrical property as well as the device performances with higher defect density. 19,21,22 However, excessive Na diffusion from the SLG substrate not only hindered the grain size of CIGS film but also degraded its electrical property as well as the device performances with higher defect density.…”

Section: Introductionmentioning

confidence: 99%

“…20 Tiwari and Schock had determined that alkali elements diffused from SLG through molybdenum (Mo) grain boundaries and subsequently incorporated in the CIGS films. 19 In view of this result, the control of alkali atom diffusion from SLG to CIGS absorber becomes very critical although the diffusion mechanism remains elusive up to now. 19 In view of this result, the control of alkali atom diffusion from SLG to CIGS absorber becomes very critical although the diffusion mechanism remains elusive up to now.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Role of surface microstructure of Mo back contact on alkali atom diffusion and Ga grading in Cu(In,Ga)Se₂ thin film solar cells

Gong

Kong

et al. 2019

Energy Science & Engineering

View full text Add to dashboard Cite

While the major function of molybdenum (Mo) back contact on soda‐lime glass (SLG) substrate in Cu(In,Ga)Se2 (CIGS) solar cells is to provide good adhesion and good conductivity, its role as the transportation channel for alkali elements from SLG substrate to CIGS layer has often been overlooked. In this work, we have intentionally fabricated tri‐layered structure in contrast to the conventional bi‐layered structure for Mo back contact with the microstructure of the thin topmost Mo layer manipulated by the Ar pressure and water vapor during sputtering deposition. It has been discovered that the CIGS solar cell conversion efficiency can be greatly affected by this thin topmost Mo layer of the back contact. Investigations on the elemental depth profiles in the CIGS devices and the chemical states of Mo on the back contact surfaces have revealed that the surface layer of Mo back contact has a strong effect on the diffusion of alkali elements from SLG into CIGS absorber layer, which in turn influences the formation of Ga gradient in the CIGS layer and thus the solar cell performance. It was revealed that Mo(OH)6 and MoO3 formed on the surface of Mo back contact play a key role in determining the K atom distribution and Ga gradient. A reaction mechanism was also proposed.

show abstract

Incorporation of alkali metals in chalcogenide solar cells

Cited by 123 publications

References 135 publications

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Advance Deposition Techniques for Thin Film and Coating

Role of surface microstructure of Mo back contact on alkali atom diffusion and Ga grading in Cu(In,Ga)Se₂ thin film solar cells

Contact Info

Product

Resources

About

Incorporation of alkali metals in chalcogenide solar cells

Cited by 123 publications

References 135 publications

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se2: A New Mechanism for Efficient Doping in Semiconductors

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se2: A New Mechanism for Efficient Doping in Semiconductors

Advance Deposition Techniques for Thin Film and Coating

Role of surface microstructure of Mo back contact on alkali atom diffusion and Ga grading in Cu(In,Ga)Se2 thin film solar cells

Contact Info

Product

Resources

About

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Na‐Diffusion Enhanced p‐type Conductivity in Cu(In,Ga)Se₂: A New Mechanism for Efficient Doping in Semiconductors

Role of surface microstructure of Mo back contact on alkali atom diffusion and Ga grading in Cu(In,Ga)Se₂ thin film solar cells