Effect of seed layers on dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films

Abstract

The Barium zirconium titanate Ba(Zr 0.3 Ti 0.7 )O 3 thin films were prepared on Pt/Ti/SiO 2 /Si substrates with seed layers at the BZT/Pt interface by sol-gel process. Microstructure and structure of thin films were examined. Dielectric properties of thin films with various seed layers thicknesses were investigated as a function of frequency and direct current electric field. The tunability and dielectric constant of BZT thin films increased with increasing seed layer thickness from 0 to 20 nm, while it decreased with a further increase in thickness above 20 nm, meanwhile, the leakage current showed the similar tendency at applied electric field of 250 kV/cm. The optimized seed layer thickness for BZT thin films plays an important role in maintaining the high tunability and low leakage current, which are suitable for microwave device applications.

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

“…Many efforts have been made to improve the dielectric properties of the BZT thin film capacitors, including using conductive oxide electrodes such as (La 0.7 Sr 0.3 )MnO 3 [12], LaNiO 3 [13,14], and (La 0.7 Ca 0.3 )MnO 3 [15]. Effect of seed layers on dielectric properties of Ba(Zr 0.3 Ti 0.7 )O 3 thin films [16], and infrared optical properties of BZT thin films have been reported [17][18][19].…”

Karakterisasi Mikrostruktur Material Feroelektrik Barium Stronsium Titanat (BaxSr1-xTiO3) dan Stronsium Titanat (SrTiO3) dengan Variasi Suhu Sintering

“…Barium titanat merupakan bahan yang dapat digunakan dalam bentuk sampel keramik polikristalin. Bahan ini juga memiliki konstanta dielektrik tinggi dan kemampuan memperkecil loss dielectric sehingga dapat digunakan sebagai kapasitor (Gao et al, 2008 ;Weir and Nelson, 2008).…”

Kajian Variasi Temperatur Annealing dan holding time pada Penumbuhan Lapisan Tipis BaZr0,15Ti0,85O3 dengan Metode Sol-Gel

“…BZT dengan berbagai komposisi Zr telah diteliti untuk mempelajari pengaruh kandungan Zr dalam lapisan tipis BaZr x Ti 1−x O 3 , dengan bertambahnya komposisi Zr maka dapat memperbesar parameter [5]. Penumbuhan lapisan tipis BaZr x Ti 1−x O 3 dapat dilakukan dengan berbagai cara diantaranya: sputtering [6], metal organic chemical vapour deposition atau MOCVD [7] dan metode sol gel [8]. Penggunaan metode-metode tersebut mempunyaii tujuan untuk mendapatkan lapisan tipis yang baik dan aplikatif.…”