Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells

Driscoll, Kristina; Bennett, Mitchell F.; Polly, Stephen J.; Forbes, David V.; Hubbard, Seth M.

doi:10.1063/1.4862028

Cited by 30 publications

(22 citation statements)

References 15 publications

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“…34,35 Due to the positiondependence of f n,p and g QD , the quantities R QD and j QD are also functions of position. Hence, our model can be used to study the effects of the QD layer position.…”

Section: Discussionmentioning

confidence: 99%

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Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

Asryan

2016

Journal of Applied Physics

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We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

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Section: Discussionmentioning

confidence: 99%

“…We are, however, able to derive here an analytical expression for the j-V characteristic [Eq. (35)] without involving extensive numerical calculations.…”

Section: Discussionmentioning

confidence: 99%

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Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

Asryan

2016

Journal of Applied Physics

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“…However, the model predicts an additional loss of 20 mV in the V oc for the QD located in the exact center of the intrinsic region versus those located near the doped edges. 69 The reduction of the V oc was mainly attributed to SRH recombination, which showed the maximum value when the electron and hole density were similar at the place such as the center of the intrinsic region. 66 They have also fabricated three samples experimentally with the three QD locations mentioned above to verify the simulated results.…”

Section: Effect Of Quantum Dot Location On Carrier Transportation Andmentioning

confidence: 99%

“…41,[66][67][68] Driscoll et al 69 performed simulations on three positions for InAs QD located in the intrinsic region: (1) near the n-doped base, (2) exact center of i-region, and (3) near the p-doped emitter. 69 From the simulation, they found that J sc was nearly identical for the three positions as all were located in a high electric field region and carrier collection remained efficient for all three conditions. However, the model predicts an additional loss of 20 mV in the V oc for the QD located in the exact center of the intrinsic region versus those located near the doped edges.…”

Section: Effect Of Quantum Dot Location On Carrier Transportation Andmentioning

confidence: 99%

Recent progress on quantum dot solar cells: a review

2016

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Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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