Effect of processing temperature on characteristics of metal-ferroelectric (BiFeO3)-insulator (HfLaO)-silicon capacitors

Sun, Chia‐Liang; Juan, Trevor Pi-Chun; Hsu, Yu-Wei; Liu, Yuwei

doi:10.1016/j.tsf.2010.05.011

Cited by 4 publications

(3 citation statements)

References 27 publications

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“…The reason may be the surface roughness. A rough surface can reportedly induce interface states, lowering the interface barrier [37][38][39][40]. Consequently, the leakage current can be enhanced at a rough surface but not at a smooth one.…”

Section: Electrical Characteristics Of Fluorinated Gd 2 O 3 -Nc Flash...mentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

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Section: Electrical Characteristics Of Fluorinated Gd 2 O 3 -Nc Flash...mentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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“…A higher RMS surface roughness translates to more pores, which act as weak point where breakdown may occur [11]. Moreover, a large number of experiments have found that a higher RMS surface roughness of the dielectric layer is directly increasing the leakage current of the samples [12,13].…”

Section: Resultsmentioning

confidence: 99%

Effects of SiO<sub>2</sub> Nanoparticles on Dielectric Characteristic of Aloe Vera Paste

Khor

Cheong

2013

AMR

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Natural Aloe vera paste has been reported as an alternative organic dielectric material. In this study, natural Aloe vera paste incorporated with silicon dioxide (SiO2) nanoparticles (NPs) has been investigated. The natural Aloe vera paste with different weight loading (0.5 to 3.8 wt%) of SiO2 NPs was screen printed on aluminum (Al) layer supported by a soda lime glass substrate and dried at room temperature. The solidified sample with 1.5 wt% of SiO2 NPs showed the lowest leakage current density. Next, the solidified samples were additional dried in an oven at 40°C for 30 minutes to study its effect against room temperature. The additional drying process facilitated cross-linking on natural Aloe vera layer and consequently enhanced the dielectric properties of the natural Aloe vera with 1.5 wt% of SiO2 NPs, whereby leakage current and dielectric constant were decreased and increased, respectively.

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“…Many studies had been reported that rapid temperature annealing method was successfully to increase the electrical and physical properties [53][54][55][56]. In addition, grain size, electrical properties and surface roughness are greatly affected by annealing temperature under conventional furnace annealing.…”

Section: Cfa and Rta Post-treatment Technologymentioning

confidence: 99%

Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

Cheng¹,

Chen²,

Lin³

et al. 2011

Ferroelectrics - Applications

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Effect of processing temperature on characteristics of metal-ferroelectric (BiFeO3)-insulator (HfLaO)-silicon capacitors

Cited by 4 publications

References 27 publications

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Effects of SiO<sub>2</sub> Nanoparticles on Dielectric Characteristic of Aloe Vera Paste

Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

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