Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

Preparation of BaTiO3 nanopowders by the solution combustion method

“…They are applied for fabrication of high-value capacitors, components of various physical sensors, computer memory microchips (DRAM и FRAM) and high-frequency devices such as varistors, frequency multiplicators, filters, oscillators and resonators [1][2][3]. One of the most widely used ceramic ferroelectric materials is barium titanate (BaTiO 3 (BT)), which possesses the perovskite (ABO 3 ) crystal structure based on octahedrons (TiO 6 ) bonded with Ba cations [4][5][6].…”

“…The aim of the work was to investigate how the parameters of SCS affect BT phase composition, microstructure and electro-physical properties of the product. 3 …”