Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization

Kim, Hyoungjae; Jeong, Haedo

doi:10.1007/s11664-004-0294-4

Cited by 52 publications

(28 citation statements)

References 7 publications

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“…Hence, for fixed rotational ratio , the material removal of wafer at the edge area is higher than that at the central area. This conclusion is consistent with the one given in [13] and the references therein. While in [13], the result was obtained through a Taylor series expansion, it is valid only for small and .…”

Section: Forsupporting

confidence: 94%

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Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View

Tyan

2007

IEEE Trans. Semicond. Manufact.

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In this paper, we analyze the nonuniformity of sliding distance on both the wafer and polishing pad from a kinematic point of view. Using the Fourier series expansion, it can be shown that in steady state the nonuniformity caused by contact relative velocity is determined by rotational speed ratio between platen and wafer carrier ( ) and the ratio of wafer radius to the distance between the platen center and wafer center ( ). In general, the nonuniformity of wafer increases with and (). An important observation for the polishing pad is that in two particular ranges of the ratio , larger ( ) on the contrary yields smaller nonuniformity. Then, a ring-type polishing pad is proposed for the purpose of improving the nonuniformity of both wafer and pad. However, it turns out the result for the pad of large size is worse than the traditional shape, unless the rotational speed of the pad is much slower than that of the wafer.

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Section: Forsupporting

confidence: 94%

“…This conclusion is consistent with the one given in [13] and the references therein. While in [13], the result was obtained through a Taylor series expansion, it is valid only for small and . From (2.20), it is easy to identify that…”

Section: Forsupporting

confidence: 94%

Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View

Tyan

2007

IEEE Trans. Semicond. Manufact.

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“…A kinematic motion results from the relative velocities of the head and platen rotation. 16 The quantity of Cu dishing and dielectric erosion were measured after the CMP using a slurry containing 1 wt.% ammonia, 3 wt.% colloidal silica (70 nm), 5 wt.% organic acid, and 2.3 wt.% hydrogen peroxide relative to deionized (DI) water.…”

Section: Experimental Conditionsmentioning

confidence: 99%

Effect of surfactant on package substrate in chemical mechanical planarization

Jang

Jeong

Yuh

et al. 2015

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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The demand for pattern miniaturization on package substrates has been steadily increasing. One technical innovation for the package substrate manufacturing process was chemical mechanical planarization (CMP). In conventional wiring, it was possible to remove extraneous copper through only the etching process. However, etching defects occur with narrower line widths. As the package substrate has a Cu hybrid structure through Cu plating and copper clad laminate (CCL) removal, it is necessary to apply the CMP to remove excess copper. However, defects are generated by the CMP process due to mechanical and chemical effects from the slurry. This study investigated the surfactant effect on Cu dishing and erosion in patterns with approximately 10/10 µm line width and spacing. The conventional Cu slurry without a surfactant had severe erosion (0.58 µm) in Cu patterns of 4/6 µm and deep dishing (4.2 µm) in Cu patterns of 14/16 µm. However, the experimental results showed that the friction force during CMP decreased, with smaller dishing and erosion as surfactant concentration increased. Finally, globally planarized Cu patterns were realized with an erosion range of 0.22 µm to 0.35 µm and a dishing range of 0.37 µm to 0.69 µm with 3 wt.% surfactant.

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“…The sliding distance during contact with the retaining ring (S r ) can be calculated by subtracting S w from the sliding distance during contact with the wafer and the retaining ring (S w+r ). The distribution of the sliding distance is determined by using the rotation ratio (ω w /ω p ) and the distance from the center of the pad to that of the wafer D. 14 During the CMP process, the heat generation largely depends on the friction force (F) between the polishing pad and the wafer. The frictional behavior during the CMP process is determined by the material property of the wafer, applied load, relative velocity, pad's properties, and slurry composition.…”

Section: Empirical Modeling Of Temperature Distributionmentioning

confidence: 99%

Temperature distribution in polishing pad during CMP process: Effect of retaining ring

Lee

Guo

Jeong

2012

Int. J. Precis. Eng. Manuf.

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Heat generation is inevitable during the chemical mechanical planarization (CMP) process because the mechanical and chemical removal of material is carried out by using abrasives and chemicals in the CMP slurry. In this paper, results obtained from experiments performed on a membrane-type carrier having a retaining ring were used to study the temperature distribution in a polishing pad during the CMP process. To understand and predict the distribution of temperature rise, a kinematical analysis of the temperature distribution was performed by considering the frictional characteristics of the process. The results of this study can be used to predict the temperature distribution in a polishing pad, and such predictions can help in developing a more effective CMP process.

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Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization

Cited by 52 publications

References 7 publications

Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View

Nonuniformity of Wafer and Pad in CMP: Kinematic Aspects of View

Effect of surfactant on package substrate in chemical mechanical planarization

Temperature distribution in polishing pad during CMP process: Effect of retaining ring

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