Amorphous boron nitride ͑a-BN͒ was produced by ball milling of hexagonal BN ͑h-BN͒. Turbostratic BN ͑t-BN͒ and mesographite BN ͑m-BN͒ with different degrees of three-dimensional order ͑DTDO͒ were subsequently prepared by annealing the a-BN at different temperatures. The photoluminescence ͑PL͒ of the BN samples with different structures and DTDOs was investigated in the visible region from 460 to 800 nm. The h-, a-, and t-BN samples, which have completely ordered, disordered and two-dimensionally ordered structures, respectively, emitted weak continuums. The m-BN samples with three-dimensionally ordered structures gave discrete PL bands, which we attributed to the presence of N B antisites or a complex formed by an Fe atom and a B vacancy in the BN layer. The intensity and energy of the PL bands changed greatly with DTDO and could be tuned by varying the annealing temperature. The strongest PL bands at 593 and 612 nm were observed in one of the m-BN samples produced at an annealing temperature of 1100°C, and their intensity was about 1000 times the intensity of h-BN. Unintentional Fe contamination did not affect the PL nature of the m-BN samples but increased the PL intensities of some bands greatly.