Synthesis of nanomaterials with target crystal structures, especially those new structures that cannot be crystallized in their bulk counterparts, is of considerable interest owing to their strongly structure-dependent properties. Here, we have successfully synthesized and identified new-phase nanocrystals (NCs) associated with orthorhombic MnP-type (B31) MnS by utilizing an effective high-pressure technique. It is particularly worth noting that the generated new structured MnS NCs were captured as expected by quenching the high-pressure phase to the ambient conditions at room temperature. Likewise, the commercially available bulk rocksalt (RS) MnS material underwent unambiguously a reversible phase transition when the pressure was released completely. First-principles calculations further supported that the B31-MnS was more energetically preferable than the RS one under high pressure, which can be plausibly interpreted by the structural buckling with respect to zigzagged arrangements within B31 unit cell. Our findings represent a significant step forward in a deeper understanding of the high-pressure phase diagram of MnS and even provide a promising strategy to prepare desired nanomaterials with new structures that do not exist in their bulk counterparts, thus greatly increasing the choice of materials for a variety of applications.

Crystal structure and electronic structure of quaternary semiconductors Cu2ZnTiSe4 and Cu2ZnTiS4 for solar cell absorber

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Cu2ZnSn(S,Se)4 (CZTSSe) films were deposited on the Mo-coated glass substrates, and the CZTSSe-based solar cells were successfully fabricated by a facile solution method and postselenization technique. The influencing mechanisms of the selenization temperature and time on the power conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) of the solar cell are systematically investigated by studying the change of the shunt conductance (Gsh), series resistance (Rs), diode ideal factor (n), and reversion saturation current density (J0) with structure and crystal quality of the CZTSSe film and CZTSSe/Mo interface selenized at various temperatures and times. It is found that a Mo(S1-x,Sex)2 (MSSe) layer with hexagonal structure exists at the CZTSSe/Mo interface at the temperature of 500 °C, and its thickness increases with increasing selenization temperature and time. The MSSe has a smaller effect on the Rs, but it has a larger influence on the Gsh, n, and J0. The PCE, Voc, and FF change dominantly with Gsh, n, and J0, while Jsc changes with Rs and Gsh, but not Rs. These results suggest that the effect of the selenization temperature and time on the PCE is dominantly contributed to the change of the CZTSSe/CdS p-n junction and CZTSSe/MSSe interface induced by variation of the quality of the CZTSSe film and thickness of MSSe in the selenization process. By optimizing the selenization temperature and time, the highest PCE of 7.48% is obtained.