Effect of Postdeposition Oxidation and Subsequent Reduction Annealing on Electric and Optical Properties of Amorphous ZnO–SnO[sub 2] Transparent Conducting Films

Wang, Chin-Hui; Chen, Shih-Wei; Wu, Jenn‐Ming; Wei, Chao‐Nan; Bor, Hui‐Yun

doi:10.1149/1.3528169

Cited by 18 publications

(6 citation statements)

References 16 publications

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“…Thus, these Zn–Sn–O compounds could well be closest to experimental realization of disordered thermoelectrics. Highly conductive samples of amorphous (ZnO) x (SnO 2 ) 1– x alloys with σ in the range of 10 5 –10 6 S m –1 , − and amorphous ZnSnO 3 samples with very high mobility (10–50 cm 2 V –1 s –1 ) have been reported. , These transport values are not too far from their crystalline counterparts. − Although the TCOs provide an easier access to understanding amorphous thermoelectrics, the transparent character (or oxide composition) of these materials is not a necessity. As inexpensive, ubiquitous and technologically important materials, ZnO and ZnO-based compounds have also been explored for their thermoelectric behavior.…”

Section: Introductionmentioning

confidence: 99%

Amorphous ZnO-Based Compounds as Thermoelectrics

2016

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A computational estimate of thermoelectric behavior of amorphous ZnO is reported in this paper. Thermal conductivity of a material is usually lower in an amorphous structure than in a crystalline structure. Most thermoelectrics are based on crystalline semiconductors with the electronic structure optimized to produce a high power factor. Calculations based on density functional theory and semiclassical methods, together with previous experimental results, suggest that the power factor of amorphous ZnO-based compounds could be as high as that of crystalline ZnO. Thermal conductivity of amorphous ZnO is estimated to be only ∼1/25 of that of crystalline ZnO, according to the molecular dynamics calculations presented here. The computed power factor and the lattice thermal conductivity together indicate a figure of merit zT over 0.2 at 600 K for amorphous ZnO. These numbers also suggest that amorphous ZnSnO3 could be a prime candidate to study amorphous thermoelectrics, as its estimated thermoelectric parameters are comparable to those known for the state-of-the-art microstructural or nanostructured ZnO.

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Section: Introductionmentioning

confidence: 99%

Amorphous ZnO-Based Compounds as Thermoelectrics

2016

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“…However, the effort for developing the indium-free oxide semiconductors have been continued for oxide TFTs due to the rare indium element based devices exhibiting the unceasing cost up tendency. Among them, Zn-Sn-O (ZTO) thin films attract much attention due to its wide band gap, high visible transmittance, good n-type electrical conductivity, as well as its cheapness [2]. Similar to IGZO, ZnO and SnO 2 can easily form an amorphous phase due to different crystal structures (ZnO: wurtzite, SnO 2 : rutile) [3].…”

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confidence: 99%

Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process

Lan¹,

Pu²,

Pang³

et al. 2012

EPL

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Top-gate thin-film transistors (TFTs) with indium-free multicomponent amorphous lanthanum-zinc-tin-oxide (a-LZTO) as channel layer and organic poly (methylmethacrylate) (PMMA) as dielectric layer were prepared by the solution process of the dip coating method. X-ray photoelectron spectroscopy (XPS) verified that the oxygen-vacancy-related O1s peak decreased with increasing La content. Moreover, the addition of La 3+ caused the band gap of LZTO films to broaden. The results indicate that La atoms acted as a carrier suppressor in ZTO films. The optimum TFT performance was achieved at a La content of 9%, with saturated mobility of 3.07 cm 2 /Vs, threshold voltage of 0.89 V and on-to-off current ratio of ∼10 4 , respectively.

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“…This depended somewhat on the oxygen partial pressure, as well as other parameters [28,29,30]. The electrical resistivity was in the range of 10 -2 to 10 2 -cm, depending on film thickness, substrate temperature, oxygen partial pressure, as well as the sputtering target used.…”

Section: A N-type Layermentioning

confidence: 99%

Sputtering of metal oxide tunnel junctions for tandem solar cells

Johnson

Song

Liptak

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Broken gap metal oxide tunnel junctions have been created for the first time by sputtering. Using a ceramic ZnO-SnO 2 target and a reactively sputtered copper target we created ZnSnO 3 and Cu 2 O for the n-type and p-type layers, respectively. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIGS-based solar cell applications. As-deposited films demonstrated a dependence of the I-V profile with postdeposition Rapid Thermal Anneal (RTA) and substrate selection. Total junction specific contact resistances under 1-cm 2 have been achieved.

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Effect of Postdeposition Oxidation and Subsequent Reduction Annealing on Electric and Optical Properties of Amorphous ZnO–SnO[sub 2] Transparent Conducting Films

Cited by 18 publications

References 16 publications

Amorphous ZnO-Based Compounds as Thermoelectrics

Amorphous ZnO-Based Compounds as Thermoelectrics

Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process

Sputtering of metal oxide tunnel junctions for tandem solar cells

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