Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process

Abstract

Top-gate thin-film transistors (TFTs) with indium-free multicomponent amorphous lanthanum-zinc-tin-oxide (a-LZTO) as channel layer and organic poly (methylmethacrylate) (PMMA) as dielectric layer were prepared by the solution process of the dip coating method. X-ray photoelectron spectroscopy (XPS) verified that the oxygen-vacancy-related O1s peak decreased with increasing La content. Moreover, the addition of La 3+ caused the band gap of LZTO films to broaden. The results indicate that La atoms acted as a carrier suppressor in ZTO films. The optimum TFT performance was achieved at a La content of 9%, with saturated mobility of 3.07 cm 2 /Vs, threshold voltage of 0.89 V and on-to-off current ratio of ∼10 4 , respectively.

Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor

“…When La loading into the SnO film was 1.9 atom %, the E g opt value for the 1.9 atom % La-loaded SnO film increased to 2.73 eV, which is consistent with its enhanced optical transmittance (also see Table ). This blue shift can be supported by the fact that the E g value (∼5.5 eV) of La 2 O 3 is considerably larger than that of SnO (in this work, 2.66 eV). , Conversely, a significant reduction in E g opt (∼1.91 eV) was observed for the 3.1 atom % La-loaded SnO film. The origin of this abnormal behavior is not clear.…”

Effects of silicon doping on the performance of tin oxide thin film transistors

“…Figure shows the O 1s regions of XPS spectra of TSO thin films with Si doping content from 0 to 8.5 at.%. By Lorentzian–Gaussian fitting, the O 1s peaks are divided into three peaks O L , O M , and O H centered at 530.5, 531.8, and 532.7 eV respectively, reflecting different oxygen environments . The low‐energy peak (O L ) centered at 530.5 eV is associated with oxygen ions combined with Sn ions whereas the mid‐binding energy peak (O M ) at 531.8 eV arises from the oxygen vacancies within the TSO thin films.…”

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

“…2(a) and (b), the reverse current decreses with the increasing GO content from 2 to 6%. This might be attributed to reduction of carrier concentration caused by the addition of GO charge carrier [22][23][24][25].…”