Effect of post-oxidation anneal on ultrathin SiO2 gate oxides

Arienzo, M.; Dori, L.; Szabo, Thomas N.

doi:10.1063/1.97465

Cited by 20 publications

(10 citation statements)

References 17 publications

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“…We fabricate the devices in the following procedure: first, 10 nm SiO 2 is grown on RCAcleaned n-Si (001) substrates (average resistivity = 0.04 ohm• cm) by dry oxidation at 1000 °C for 15 min, followed by N 2 annealing at 1000 °C for 1 h to improve the interface quality. 48 Then Sn nanostructures with a nominal thickness of 20 nm are evaporated at 0.2 Å/s onto the SiO 2 layer. For solar-blind UV detectors, the Sn nanostructures are deposited through various sizes of mask openings ranging from 50 × 50 μm 2 to 2 × 2 mm 2 .…”

Section: Acs Photonicsmentioning

confidence: 99%

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

Wang

Liu

2018

ACS Photonics

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A solar-blind UV photodetector is designed and fabricated based on a nanophotonic metal–oxide–semiconductor structure. A large potential barrier of ∼3.8 eV at the metal/oxide interface enables solar-blind UV detection by blocking the electrons excited by visible photons while allowing UV-excited hot electrons to pass through. By selecting metal absorbers with high density of states near the Fermi level and employing photon management in self-assembled pseudoperiodic metal nanostructures, we managed to achieve ∼74% spectrally averaged UV absorption at λ = 200–300 nm. Furthermore, such a high UV absorption is achieved within the hot electron mean free path of ∼50 nm from the metal/oxide interface, effectively facilitating the ballistic transport of the UV-excited hot electrons across the interfacial barrier and improving the overall photocurrent. The device has demonstrated a responsivity of 29 mA/W and an internal quantum efficiency of ∼18% at λ = 269 nm, a significant advance compared to ∼1% internal quantum efficiency of existing hot electron photodetectors. The photoresponse to visible light is 3–4 orders lower than the UV responsivity, implementing solar-blind UV detection. These results indicate that photon management in metal absorbers with high density of states near the Fermi level can drastically improve the quantum efficiency of hot electron detectors by >10× compared to existing metal/semiconductor Schottky photodetectors. The same device principle can also be extended to cover other spectral regimes inaccessible to conventional Si-based photodetectors.

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Section: Acs Photonicsmentioning

confidence: 99%

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

Wang

Liu

2018

ACS Photonics

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“…Much work has been done to improve the quality and reduce defect density of the as-grown oxide (15)(16)(17). The effects of other processing in CMOS technologies on the quality of the oxide has also been a subject of intensive study; for example, intrinsic and extrinsic gettering in the front-end processing (18)(19)(20)(21)(22), high-temperature treatments after gate polysilicon deposition (15,(23)(24)(25), reactive ion etching (26)(27)(28)(29), ion implantation and annealing (14,30), postmetal annealing (31), and final passivation film deposition (32). However, most of the studies concerning the breakdown phenomenon in silicon dioxide have employed simple, minimally processed MOS capacitors.…”

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confidence: 99%

Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS Processing

Koyanagi

Holland

et al. 1989

J. Electrochem. Soc.

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The processing effects on thin gate oxide yield and lifetime were studied by using ramp voltage and time-dependent dielectric breakdown (TDDB) measurements on minimally processed MOS capacitors and fully processed devices in a CMOS technology. Gate oxides grown in a wet ambient are considerably superior to those grown in a dry 02 ambient interms of breakdown distribution, yield, and lifetime. In addition, the correlation between lifetime and applied electric field also suggests an advantage for using wet oxides rather than dry oxides for scaling down the thickness. Several processing modules in a CMOS technology on the gate oxide breakdown characteristics are examined. High temperature oxidatiqn and drive or back-side gettering processing prior to the gate oxidation steps improve the oxide yield. Reactive ion or plasma etching for the gate electrode definition reduces lifetime of approximately 10% of the devices compared to the wet-etched control. However, the most significant influence on the gate oxide yield and lifetime occurs during the oxidation and polysilicon gate deposition processing steps. Fully processed CMOS devices show a large reduction in gate oxide yield and lifetime as compared to minimally processed capacitors. Additional processing for double level meta]lization further degrades the gate oxide. This result indicates the cumulative nature of processing induced damage. Breakdown characteristics are significantly degraded when electrons are injected from the polysilicon gate as opposed to injection from the silicon substrate for the fully processed devices. This polarity dependence can be explained by plasma processing induced trapped holes near the polysilicon/SiO2 interface which also cause anomalous leakage currents with a negative gate bias.

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“…17 For devices in the submicron range for metal-oxidesemiconductor very large scale integration ͑MOS VLSI͒, it is necessary to fabricate SiO 2 films with thicknesses around 100 Å in a repeatable manner. Several methods have been put forward for the fabrication of very thin high-quality silicon dioxides based on thermal oxidation processes, [20][21][22][23] but the thermal oxidation processes always involve high processing temperatures ͑usually Ͼ800°C͒, which would give rise to several undesirable diffusion-related and high temperature-sensitive effects that may hinder the performance of small MOS devices and other integrated circuit components. A low temperature processing for fabrication of silicon dioxides can be performed using plasma enhanced chemical vapor deposition ͑PECVD͒ processes.…”

Section: Introductionmentioning

confidence: 99%

Optical emission spectra of microwave oxygen plasmas and fabrication of SiO2 films

Chau¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The optical emission spectra of microwave oxygen plasmas under various gas pressures have been investigated. At the gas pressure of 0.01 Torr the plasma-generated particles are mainly excited atomic oxygen and ionic molecular oxygen species. As the gas pressure is increased to a value higher than 0.2 Torr, the plasma contains excited atomic oxygen with emission peaks at 777 and 844 nm and a new emission peak at 759 nm. When the gas pressure reaches 2.9 Torr, only a single emission peak at 759 nm appears. To the best of our knowledge, the optical emission spectra peak at 759 nm has not been reported before. This peak is thought to be due to the presence of excited molecular oxygen species. At low gas pressures, the concentrations of atomic oxygen and ionic molecular oxygen increase linearly with increasing input power to the plasma, while there is no such input power dependence for excited molecular oxygen. SiO2 films have also been fabricated by means of oxidation of silicon wafers in microwave oxygen plasmas at two gas pressures, 0.01 and 2.2 Torr. It is found that the SiO2 films grown at 0.01 and 2.2 Torr have properties similar to those of thermally grown oxide, and that the films grown at 0.01 Torr have a lower value of interface trap density (≊9×10−10 eV−1 cm−2) and a smaller leakage current. Atomic oxygen species are found to be the main species to contribute to the oxidation of silicon in microwave oxygen plasmas.

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Effect of post-oxidation anneal on ultrathin SiO2 gate oxides

Cited by 20 publications

References 17 publications

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS Processing

Optical emission spectra of microwave oxygen plasmas and fabrication of SiO2 films

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