An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

doi:10.1021/acsphotonics.8b01055

Cited by 18 publications

(25 citation statements)

References 46 publications

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“…The working principle of these includes the generation of hot carriers in the metal due to light excitation, their migration to the semiconductor-metal interface and the subsequent emission over the Schottky barrier into the semiconductor. [257][258] The additional hot carriers help in improving the performance of the photodetector. Another field of lightmatter interaction from the classical view-point is the use of anti-reflective (AR) coatings.…”

Section: Light-matter Interactionmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

272

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: Light-matter Interactionmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

272

153

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“…The preceding sections of this article discuss generation, relaxation, and extraction of hot charge carriers by different means and all these efforts were taken considering their application in numerous fields. It has been reported that the hot charge carriers, particularly hot electrons have enhanced capability to undergo interfacial charge transfer and induce the energetically expensive chemical reactions . This section is dedicated to the application of hot charge carriers in different areas such as photovoltaics, photocatalysis, H 2 generation etc.…”

Section: Application Of Hot Charge Carriers In Different Areasmentioning

confidence: 99%

“…It has been reported that the hot charge carriers, particularly hot electrons have enhanced capability to undergo interfacial charge transfer and induce the energetically expensive chemical reactions. [41,42,77,79,80,[85][86][87][88][89][90] This section is dedicated to the application of hot charge carriers in different areas such as photovoltaics, photocatalysis, H 2 generation etc.…”

Section: Application Of Hot Charge Carriers In Different Areasmentioning

confidence: 99%

Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Singhal

Ghosh

2019

ChemNanoMat

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This article discusses the hot charge carriers in semiconductor quantum dots (QDs): their generation, relaxation, extraction and applications in different technologically relevant areas. It has been reported that the most common ways to generate hot charge carriers are photo‐excitation by energy more than the band gap energy. However, recently the other means to generate hot charge carriers such as doping, and semiconductor plasmon interaction have also been evolved and their advantages over the conventional method have been discussed. Relaxation dynamics of hot charge carriers and different processes related to this such as multiple exciton generation, Auger recombination, phonon vibrations and ligand assisted charge carrier relaxation are mentioned. It was shown that the relaxation mechanism of hot charge carriers (both hot electron and hot hole) follow different pathways and either of the mechanism is playing a role depending on the QDs structure and the surrounding conditions. Studies pertaining to interaction of QDs with other semiconductors, metal nanoparticles or with different molecular adsorbates suggest that the hot charge carrier extraction is possible in these heterojunctions with extraction time in sub‐ps scale. Application of hot charge carriers in different fields such as photovoltaics, photo‐catalysis, infrared detectors, and H2 detection have been shown and it was observed that the efficiency of the above‐mentioned processes is much higher when the hot charge carriers are involved, suggesting their importance in these areas.

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Section: Introductionmentioning

confidence: 99%

Recent Progress and Future Opportunities for Hot Carrier Photodetectors: From Ultraviolet to Infrared Bands

Zhang

Luo

Maier

et al. 2022

Laser & Photonics Reviews

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The hot carriers generated from the nonradiative decay of surface plasmons in metallic nanostructures can inject into the conduction band of a semiconductor, allowing for the sub‐bandgap photodetection under room temperature. By the controllable interfacial barrier height between the plasmonic and semiconductor/insulator materials, the hot carrier photodetectors working from ultraviolet to infrared bands are extensively demonstrated with significant progress. In this review, hot carrier dynamics are briefly discussed from generation, transport, and emission perspectives. The state‐of‐the‐art progress of hot carrier photodetectors with various configurations, material constitutions, and plasmonic nanostructures are surveyed. To further promote hot carrier extraction efficiency toward the practical applications, the thermodynamic loss analysis, and the potential strategies from the optical, electrical, and material perspectives are addressed. The performances of the developed hot carrier photodetectors are also summarized, particularly addressing the novel functionalities, challenges, and future opportunities.

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An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector

Cited by 18 publications

References 46 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Recent Progress and Future Opportunities for Hot Carrier Photodetectors: From Ultraviolet to Infrared Bands

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