Effect of plasma treatments on ultra low-k material properties

Humbert, A.; Mage, L.; Goldberg, C.; Junker, K.; Proença, Luís; Lhuillier, J. B.

doi:10.1016/j.mee.2005.07.022

Cited by 26 publications

(15 citation statements)

References 7 publications

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“…8,21,[25][26][27] The atomic hydrogen in the plasma can break bonds in the SiOCH matrix leading to the formation of more polar Si-H and Si-OH bonds, as listed in the potential following reactions: 8,21,[25][26][27] The atomic hydrogen in the plasma can break bonds in the SiOCH matrix leading to the formation of more polar Si-H and Si-OH bonds, as listed in the potential following reactions:…”

Section: B H 2 Plasmamentioning

confidence: 99%

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Possémé

Chevolleau

David

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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This work focuses on the impact of oxidizing and reducing ash chemistries on the modifications of two porous SiOCH films with varied porosities (8% [low porosity (lp)-SiOCH] and 45% [high porosity (hp)-SiOCH]). The ash processes have been performed on SiOCH blanket wafers in either reactive ion etching (RIE) or downstream (DS) reactors. The modifications of the remaining film after plasma exposures have been investigated using different analysis techniques such as x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy (FTIR), x-ray reflectometry, mercury probe capacitance measurement (C-V), and spectroscopic ellipsometry (SE). FTIR analyses show that the lp-SiOCH film is not significantly altered by any of the ash processes investigated (DS-H2∕He, RIE-O2, and RIE-NH3), except by downstream oxidizing plasmas (DS-O2 or DS-N2∕O2) which induce some carbon depletion and moisture uptake, resulting in a slight increase of the k value. The porosity amplifies the sensitivity of the material to plasma treatments. Indeed, hp-SiOCH is fully modified (moisture uptake and carbon depletion) under oxidizing downstream plasma exposures (DS-O2 and DS-N2∕O2), while it is partially altered with the formation of a denser and modified layer (40–60nm thick), which is carbon depleted, hydrophilic, and composed of SiOxNyHz with RIE-NH3 and DS-N2∕H2 plasmas and SiOxHy with RIE-O2 plasma. In all the cases, the k value increase is mainly attributed to the moisture uptake rather than methyl group consumption. hp-SiOCH material is not altered using reducing DS chemistries (H2∕He and H2∕Ar). The porous SiOCH film degradation is presented and discussed with respect to chemistry, plasma parameters, and plasma mode in terms of film modification mechanism.

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Section: B H 2 Plasmamentioning

confidence: 99%

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Possémé

Chevolleau

David

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…H 2 /He reactive plasma clean treatment (RPC) successfully prevented Cu from diffusing into a low-k polymer after annealing at 200 • C for 1000 h. The method is proven to be effective for characterizing and improving pore-sealing and barrier performance for Cu/porous ultra low-k interconnect [11] . Plasma treatments are identified to enhance adhesion without degrading the dielectric constant [12] . The CHF 3 plasma treatment on the SiCOH film leads to a reduction in the flat-band voltage V FB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property [13] .…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films

Yuan¹,

Yin²,

Zhao-Yuan³

2013

Plasma Sci. Technol.

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The commercially available hydrogensilsesquioxane (HSQ) offers a low dielectric constant. In this paper, the impact of oxygen plasma treatment has been investigated on the lowk HSQ films. Fourier transform infrared (FTIR) spectroscopy was used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds after treatments. C-V and I-V measurements were used to determine the dielectric constant, the electronic resistivity and the breakdown electric field, respectively. The result indicates that oxygen plasma treatment will damage the HSQ films by removing the hydrogen content. Both dielectric constant and leakage current density increase significantly after oxygen plasma exposure. The dielectric constant and leakage current density can both be decreased by annealing at 350 • C for 1.5 h in nitrogen ambient. The reason is that the open porous of the external films can be modified and density of thin film be increased. The rough surface can be smoothed.

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“…Plasma exposure can produce considerable damage in low‐ k materials: carbon depletion, hydrophilization, and surface roughening 14–21. On the other hand, plasma exposure can, perhaps, be used to enhance the surface chemistry, manipulate the surface morphology, and, in some cases, hinder diffusion by sealing a porous surface 22–26. Plasma exposure is also certain to affect the dielectric constant of the integrated structure.…”

Section: Introductionmentioning

confidence: 99%

Effects of Plasma Exposure on SiCOH and Methyl Silsesquioxane Films

Silverstein

Shach-Caplan

Khristosov

et al. 2007

Plasma Processes & Polymers

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The effects of plasma exposure (O2, Ar, H2, and CF4) on the surface chemistries, surface energies, and dielectric constants, k, of two low‐k SiCOH films (BD‐1 and BD‐2) and a methyl silsesquioxane (MSQ) control are described. Relatively non‐polar, low surface energy MSQ and BD‐2 exhibited significant changes when exposed to various plasmas: carbon depletion, oxygen enhancement, and increased surface energy. The higher surface energy BD‐1 has a more extensive SiOSi network structure, which was relatively insensitive to plasma exposure. BD‐1's relatively low k is indicative of a porous material. While most plasmas produced an increase in k, deposition of CFn species as a result of exposure to a CF4 plasma caused a slight decrease in k. The increase in k corresponded to an increase in the dispersive surface energy component.

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Effect of plasma treatments on ultra low-k material properties

Cited by 26 publications

References 7 publications

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films

Effects of Plasma Exposure on SiCOH and Methyl Silsesquioxane Films

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