Effect of Pad Groove Designs on the Frictional and Removal Rate Characteristics of ILD CMP

Rosales-Yeomans, D.; Doi, Toshiro; Kinoshita, Masaharu; Suzuki, Tamio; Philipossian, Ara

doi:10.1149/1.1836127

Cited by 38 publications

(27 citation statements)

References 9 publications

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“…28,29 • Pad surface micro-texture (including pores and asperities), furrows in the pad (due to conditioning), as well as pad grooves and perforations of various designs. [30][31][32][33][34] • Centrifugal forces that grow stronger near the edge of the pad and advective transport in the radial direction due to the co-rotation of the pad and wafer during polishing. [8][9][10][11]35 • Drag forces between the moving fluid and the pad surface.…”

mentioning

confidence: 99%

Impact of Polisher Kinematics and Conditioner Disc Designs on Fluid Transport during Chemical Mechanical Planarization

McAllister

Dadashazar

Mariscal

et al. 2019

ECS J. Solid State Sci. Technol.

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Fluid film thicknesses were measured and general flow patterns were analyzed during conditioning on a polishing pad using a recently developed UV-enhanced fluorescence experimental technique. The method was used to analyze how conditioners with different working face designs and polisher kinematics (platen angular velocities) affected fluid flow characteristics on the pad surface. In general, fluid film thicknesses followed the same general trends across the pad surface for both disc designs and platen speeds. Regardless of the parameters used, the fluid film was the thickest in sections nearest to the wafer track and was significantly thinner near the center and edge of the pad. For both discs, the time for film thicknesses to reach steady-state increased with distance from the radius. In general, the full-face conditioner had a smaller maximum attainable fluid thickness (MAFT) and time to reach steady-state (TTRSS) as it most effectively expelled (i.e. squeegeed) the fluid off the pad surface. In contrast, the partial-face conditioner had

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mentioning

confidence: 99%

Impact of Polisher Kinematics and Conditioner Disc Designs on Fluid Transport during Chemical Mechanical Planarization

McAllister

Dadashazar

Mariscal

et al. 2019

ECS J. Solid State Sci. Technol.

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“…The presence of grooves would help to discharge most of the scratch sources generated during the process away from the wafer-pad contact. 11 The modeling and simulation of this phenomenon would provide a good insight. Presently, work is ongoing in this area and the results will be discussed in our next work.…”

Section: Resultsmentioning

confidence: 99%

The Synergetic Role of Pores and Grooves of the Pad on the Scratch Formation during STI CMP

Choi

Prasad

Kim

et al. 2010

J. Electrochem. Soc.

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The polishing pad plays a vital role in achieving the desired removal rates and level of surface planarity during the chemical mechanical planarization ͑CMP͒ process. Generally the pad containing both pores and grooves is used for the shallow trench isolation ͑STI͒ CMP process. After polishing the wafer, many scratches would be produced on the surface, especially chatter mark scratches on the oxide surface. In this work, the role of pores and grooves of the pad on scratch formation was studied with STI-patterned wafers with three types of pads: pad with only pores, pad with only grooves, and pad with both grooves and pores. The pad with only grooves produced more irregular-shaped scratches when compared to the pad with only pores, but the length of the scratch was smaller. A regular chatter mark type scratch would be formed only when the pad contained both pores and grooves. The most likely occurring phenomenon might be the stick-slip motion during the process. The removal rates with three different pads were compared and they were inversely correlated to each other. The presence of pores would be essential to decrease the scratch number. However the scratch number could be greatly reduced with the combination of both pores and grooves. Overall, the number of scratches would be greater with the absence of pores, and the scratch number and intensity substantially reduced with the combination of both pores and grooves.Chemical mechanical planarization ͑CMP͒ has become one of the most critical semiconductor fabrication technologies due to its superior performance in removing unwanted topography and achieving the required planarity for the creation of integrated circuits. [1][2][3][4] Especially, CMP plays a vital role in making the shallow isolation structures during shallow trench isolation ͑STI͒ processes to replace the traditional local oxidation of silicon processes, which suffer from bird's peak structure. 2,3 The planarization performance of CMP is significantly influenced by polishing pad characteristics. Different types of pads are used for polishing different materials. The design of the pad is critical in achieving the desirable CMP performance. Removal rate and uniformity are very important factors in determining the polishing performance. Therefore, much research has been done in the development and choice of the CMP pad. [5][6][7][8][9] Usually, the polishing pad, which is especially used for STI CMP, contains both pores and grooves, which help for better planarization. 10 The role of pores and grooves in affecting the removal rate has been studied extensively. 9-14 Typical CMP pads are composed of closed pore structures with spherical diameters ranging between 30 and 50 m, and on average, the pores take up approximately one-third of the total pad volume and facilitate the transport of slurry to the pad-wafer interface. 15

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“…Optimum conditions were obtained in the presence of a lubricating regime with fewer scratch sources present on the pad [62]. Also, the presence of grooves helps to discharge most of the scratch sources generated during the process away from the waferpad contact [65]. Both the structure of polishing pads, such as pores and grooves, and the hardness of the pad affect the MRR and generate the scratches.…”

Section: Pad Surface Properties and Pad Debrismentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Effect of Pad Groove Designs on the Frictional and Removal Rate Characteristics of ILD CMP

Cited by 38 publications

References 9 publications

Impact of Polisher Kinematics and Conditioner Disc Designs on Fluid Transport during Chemical Mechanical Planarization

Impact of Polisher Kinematics and Conditioner Disc Designs on Fluid Transport during Chemical Mechanical Planarization

The Synergetic Role of Pores and Grooves of the Pad on the Scratch Formation during STI CMP

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

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