Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

Belyaev, A. E.; Basanets, Volodymyr V.; Болтовец, Н. С.; Zorenko, A. V.; Капитанчук, Л. М.; Kladko, V. P.; Конакова, Р. В.; Kolesnik, Natalya V.; Korostinskaya, T. V.; Kritskaya, T. V.; Kudryk, Ya. Ya.; Kuchuk, Andrian; Миленин, В. В.; Ataubaeva, A. B.

doi:10.1134/s1063782611020047

Cited by 13 publications

(7 citation statements)

References 3 publications

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“…In this case, the package temperature was 121.4 °С, current was 0.22 A, and voltage was 47.6 V. The thermal resistance of the IMPATT diode under investigation was calculated as the ratio of the difference between the p-n junction and package temperatures to the applied power; it was 14.6 K/W. The obtained R T value is in agreement with the data given in [16].…”

Section: G1 G2supporting

confidence: 84%

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Belyaev¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction-package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance.

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Section: G1 G2supporting

confidence: 84%

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Belyaev¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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“…The Pd 2 Si phase is formed upon Pd interaction with Si in the course of Pd deposition onto the wafer heated to 300 C. This conclusion correlates with the data from x-ray diffraction and Auger electron spectrometry presented in Ref. 22.…”

Section: -3supporting

confidence: 79%

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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The temperature dependence of contact resistivity q c in lapped silicon specimens with donor concentrations of 5 Â 10 16 , 3 Â 10 17 , and 8 Â 10 17 cm À3 was studied experimentally. We found that, after decreasing part of the q c (T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. V C 2012 American Institute of Physics. [http://dx

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“…Since the output parameters of generating microwave diodes are largely limited to the thermal conditions of operation, especially overheating [29][30][31], it seems appropriate to estimate the maximum temperature of the active layer of discussed above InP Gunn diode depending on the pulse duration and the temperature distribution along the axis Z. Moreover, at prolonged operation of the diode this temperature may affect the interfacial interactions in the ohmic contacts.…”

Section: Semiconductor Physics Quantum Electronics and Optoelectronicsmentioning

confidence: 99%

Ohmic contacts based on Pd to indium phosphide Gunn diodes

Belyaev¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Experimental data on manufacturing the ohmic contacts Au-Ti-Pd-n + -InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n + -n-n ++ -n +++ -InP structure. The specific contact resistance measured at room temperature was about 7·10-5 Ohm·cm 2 . Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.

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Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

Cited by 13 publications

References 3 publications

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Ohmic contacts based on Pd to indium phosphide Gunn diodes

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