Ohmic contacts based on Pd to indium phosphide Gunn diodes

Abstract

Abstract. Experimental data on manufacturing the ohmic contacts Au-Ti-Pd-n + -InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n + -n-n ++ -n +++ -InP structure. The specific contact resistance measured at room temperature was about 7·10-5 Ohm·cm 2 . Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.