Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications

Ikeda, Akira; Elnaby, M. Abd; Hattori, Reiji; Kuroki, Yoshio

doi:10.1016/s0040-6090(00)01888-5

Cited by 20 publications

(13 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[10][11][12] Also, it was widely reported that the plasma nitridation process has been found to improve the characteristics of dielectrics and thin-film transistors. [13][14][15] In this study, these two processes are investigated to be applied to cerium dielectrics and improved characteristics, especially on the hysteresis, are observed. This makes CeO 2 a promising candidate to be used as the gate dielectric for deep submicrometer MOSFETs.…”

mentioning

confidence: 99%

Improved Characteristics of Ultrathin CeO[sub 2] by Using Postnitridation Annealing

Wang

Hung

Lee

et al. 2004

J. Electrochem. Soc.

View full text Add to dashboard Cite

This work demonstrates the improved characteristics of an ultrathin CeO 2 dielectric by using the post-N 2 O plasma treatment with additional rapid thermal N 2 annealing. The CeO 2 after the treatment exhibits superior characteristics such as a small effective oxide thickness ͑ϳ2.25 nm͒, a low leakage current (5.4 ϫ 10 Ϫ4 A/cm 2), a high breakdown electric field ͑Ϫ24 MV/cm͒, a long projected 10 yr lifetime ͑Ϫ12 MV/cm͒, a small capacitance-voltage hysteresis ͑25 mV͒, and a high barrier height for Frenkel-Poole emission ͑0.55 eV͒. These good properties are attributed to the nitrogen incorporation into the dielectric to eliminate the traps after annealing. The postnitridation annealing appears to be a very useful treatment for future ultrathin metal-oxide gate dielectrics.

show abstract

mentioning

confidence: 99%

Improved Characteristics of Ultrathin CeO[sub 2] by Using Postnitridation Annealing

Wang

Hung

Lee

et al. 2004

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…A very important requirement for the insulator film is the low density of interface states. In particular, for SiON the improved I-V and C-V characteristics reported so far are directly ascribed to the role of nitrogen [7][8][9][10][11]. It is known that nitridation of thin SiO 2 films decreases interface state generation [12][13][14], and results in reduced low-field leakage current and boron diffusion from the substrate.…”

Section: Introductionmentioning

confidence: 95%

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Konofaos

Evangelou²

2002

Semicond. Sci. Technol.

View full text Add to dashboard Cite

An investigation of the electrical properties of the SiON/n-Si interface is presented for applications in MOS and/or optical devices. The SiON films were deposited onto n-type Si substrates by CVD using different [O]/[N] ratios. Subsequent metallization led to the creation of metal-oxidesemiconductor (MOS) devices and electrical characterization took place in order to identify their electrical properties. Electrical measurements included current-voltage, capacitance-conductance-voltage (C-G-V) measurements and admittance spectroscopy, allowing the determination of the interface state density, the traps time constant and their distribution. Post-deposition annealing was also used and the annealed samples were subjected to the same investigation. The interface state density was found to lie between 1.74 × 10 12 eV −1 cm 2 and 1.72 × 10 11 eV −1 cm −2 and the post-deposition annealing reduced these values.

show abstract

“…Silicon oxynitride is also used as the tunneling dielectric in Flash memory devices. 9 The contents of nitrogen and oxygen in a SiO x N y film can vary freely between constraints of the end members: SiO 2 and Si 3 N 4 , for tailoring the physical and electrical properties of the film. For instance, the low-frequency dielectric constant of SiO x N y may vary from 3.9 ͑SiO 2 ͒ to 7.0 ͑Si 3 N 4 ͒.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of amorphous silicon oxynitride with different compositions

Sorokin

Karpushin

Gritsenko

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

A revised tight-binding Hamiltonian parametrization scheme for calculating the electronic structure of both covalent and ion-covalent solids is proposed. Unlike the conventional approaches, the present nonempirical calculation does not rely on any empirical parameter. We use the atomic properties of isolated atoms to construct the matrix elements. Results show that the predicted charge transfer in SiO 2 and Si 3 N 4 , the bandgap energies of SiO 2 , Si 3 N 4 , and SiO x N y films, as well as the electron and hole barriers at the Si/ SiO 2 , Si/ Si 3 N 4 , and Si/ SiO x N y interfaces are in good agreement with the experimental findings reported in literatures.

show abstract

Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications

Cited by 20 publications

References 18 publications

Improved Characteristics of Ultrathin CeO[sub 2] by Using Postnitridation Annealing

Improved Characteristics of Ultrathin CeO[sub 2] by Using Postnitridation Annealing

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Electronic structure of amorphous silicon oxynitride with different compositions

Contact Info

Product

Resources

About