Effect of Nitridation of Silicon Dioxide on Its Infrared Spectrum

Abstract

Thick oxide films (≈220 nm) have been nitrided heavily in ammonia. Dispersion analysis was performed on infrared transmission spectra of oxide, nitrided oxide, and CVD nitride films. The following conclusions may be drawn from the spectra: nitrided oxide is not the same material as CVD silicon nitride; nitridation results in significant loss of Si‐O asymmetric stretch intensity; and nitridation leads to the appearance of a spectral peak for planar triply bonded N‐Si asymmetric stretch analogous to that in trisilylamine. About 43% of the oxygen was replaced by nitrogen.

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

“…The last peak found at 1024 cm -1 underlined by the dispersion analysis of Naiman et al is ascribed, in their previous study, to the planar trigonal bonded nitrogen (Si 3 ≡N 4 ) [68].…”

“…Yet, Tb atom is much heavier than the Pr or Nd ones and thus, a vibration at 955 cm -1 for this bond could be excluded. Finally, such a peak at 956 cm -1 was found in a 220 nm-thick SiO x N y [68] and more precisely at the interface layer with the Si substrate whose thickness was about 2 nm on etched nitrided oxide layer [59]. In a detailed study of Ono et al, this peak, positioned exactly at 960 cm -1 , has been attributed to the doubly bonded N atoms associated with two Si atoms (≡Si-N-Si≡) with the asymmetric stretching mode [69].…”

Interpretation and modeling of IR-reflectance spectra of glasses considering medium range order

“…To take into account disorder in glasses, another model has been introduced independently by several authors [17][18][19][20]:…”

Spectral Radian Emittance and Total Emissivity of the Reaction Bonded Silicon Nitride

“…По известной спектральной полусферической излучательной способности определялась интегральная излучательная способность ε (Т) по формуле , [8,9].…”