Effect of Neutron Irradiation on High Voltage &lt;newline/&gt;4H-SiC Vertical JFET Characteristics: &lt;newline/&gt;Characterization and Modeling

Popelka, Stanislav; Hazdra, P.; Sharma, Rupendra Kumar; Záhlava, V.; Vobecký, J.

doi:10.1109/tns.2014.2358957

Cited by 15 publications

(12 citation statements)

References 17 publications

(23 reference statements)

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“…Irradiation with high‐energy electrons and fast neutrons introduces homogeneous damage in the epitaxial layer [36, 40]. In contrast with it, the damage produced by protons and alphas is strongly localised close to the ion's projected range.…”

Section: Resultsmentioning

confidence: 99%

“…The growth of the threshold voltage and the decrease in transconductance are given by the compensation of JFET's epitaxial layer, i.e. by the compensation of the channel and the drift regions [40]. Channel conductivity of the vertical normally off JFET is controlled by the width of the depletion layer extending into the channel region.…”

Section: Resultsmentioning

confidence: 99%

“…One can see a significant increase in the input series resistance and a slight increase of the gate current in the knee area, which looks such as a decrease of the threshold voltage of the gate‐to‐source junction. This effect is mainly caused by the introduction of surface defects in the oxide passivation layer along the outer side of the trench channel [40].…”

Section: Resultsmentioning

confidence: 99%

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Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

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A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal-oxide-semiconductor field-effect transistors. According to the authors' study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

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“…In Ref. , we investigated radiation hardness of commercial vertical 1700 V normally OFF SiC power N‐JFETs SJEP170R550 from SemiSouth using neutron irradiation with fluences up to 4 × 10 14 cm −2 (1 MeV neutron equivalent Si). Four degradation mechanisms causing deterioration of JFET characteristics were detected: the removal of electrons from lightly doped channel and drift region, the removal of holes from the gate, the mobility degradation and the embedding of the surface states at the interface.…”

Section: Resultsmentioning

confidence: 99%

Radiation resistance of wide-bandgap semiconductor power transistors

Hazdra

Popelka

2016

Phys. Status Solidi A

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Radiation resistance of state‐of‐the‐art commercial wide‐bandgap power transistors, 1700 V 4H‐SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was investigated. Transistors were irradiated with 4.5 MeV electrons with doses up to 2000 kGy. Electrical characteristics and introduced defects were characterized by current–voltage (I–V), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) measurements. Results show that already low doses of 4.5 MeV electrons (>1 kGy) cause a significant decrease in threshold voltage of SiC MOSFETs due to embedding of the positive charge into the gate oxide. On the other hand, other parameters like the ON‐state resistance are nearly unchanged up to the dose of 20 kGy. At 200 kGy, the threshold voltage returns back close to its original value, however, the ON‐state resistance increases and transconductance is lowered. This effect is caused by radiation defects introduced into the low‐doped drift region which decrease electron concentration and mobility. GaN HEMTs exhibit significantly higher radiation resistance. They keep within the datasheet specification up to doses of 2000 kGy. Absence of dielectric layer beneath the gate and high concentration of carriers in the two dimensional electron gas channel are the reasons of higher radiation resistance of GaN HEMTs. Their degradation then occurs at much higher doses due to electron mobility degradation.

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“…Various device types of 4H-SiC, such as diodes, MOSFETs, BJTs and JFETs have been tested under different radiation environments like protons, neutrons and gamma ray [11][12][13][14][15][16][17]. Among these devices BJTs are generally considered to be the most radiation hard.…”

Section: Introductionmentioning

confidence: 99%