Effect of neutron irradiation on charge collection efficiency in 4H-SiC Schottky diode

Performance of a 4H-SiC Schottky diode as a compact sized detector for neutron pulse form measurements

“…The fabrication of 4H-SiC Schottky diodes is described in Ref [5]. The thickness of the lightly doped n -epilayer is 13 μm with nitrogen doping concentration of 1.97 Â 10 15 /cm 3 .…”

“…The experimental equipment used to test the detector is described in Ref [5]. The detector is tested by applying a reverse bias of 200 V, and the air gap between the detector and the alpha source is 5 mm.…”

“…The accumulative neutron fluence over seven pulses on the 4H-SiC detector is 3.49 Â 10 12 cm À 2 . According to Ref [5], this is insufficient to cause significant neutron fluence dependence.…”

“…A slight decrease of 2.13% is observed in the 4H-SiC/PS ratio after seven reactor pulses (a neutron fluence of 3.49 Â 10 12 cm À 2 ). The decrease of 4H-SiC/PS ratio can be ascribed to the creation of defects during neutron irradiation, resulting in the degradation of charge collection efficiency [5]. The response spectrum of the 4H-SiC detector to 241 Am-239 Pu alpha particles is measured before neutron irradiation (see the blue curve in Fig.…”

Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC

“…In the last two decades the irradiation studies on silicon carbide (SiC), particularly 4H-SiC polytype and its electronic devices have greatly attracted the research community. Due to superior physical properties [1] and high displacement threshold energy [2], the 4H-SiC based electronic devices [3][4][5][6][7][8][9][10] were studied and are still being examined under different irradiation environments, with different irradiation parameters as well as under different temperature conditions. The performance of such devices are known to be affected by grown-in defects, irradiation-induced defects and issues with the metal contacts.…”