Performance of a 4H-SiC Schottky diode as a compact sized detector for neutron pulse form measurements

Wu, Jian; Li, Meng; Jiang, Yong; Li, Junjie; Zhang, Yi; Gao, Hui; Liu, Xiaobo; Du, Jinfeng; Zou, Dehui; Fan, Xiaoqiang; Liu, Gan; Peng, Cheng; Lü, Yi; Jiarong, Lei

doi:10.1016/j.nima.2014.10.032

Cited by 19 publications

(3 citation statements)

References 5 publications

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“…According to the forward I-V characteristics and the Bethe equation, we find the ideality factor is 1.422 ± 0.005, which indicates the current is not just dominated by thermionic current—the diffusion current and recombination current are contributing too. [ 27 ]…”

Section: Resultsmentioning

confidence: 99%

“…However, compared with commercial silicon detectors whose sensitive areas are usually in the range of 0.78–7 cm 2 , even up to 70 cm 2 in some applications, the largest sensitive area of an SiC spectrometry detector is only 0.36 cm 2 for a single chip [ 26 ] or 0.81 cm 2 for a splicing device [ 27 ]. Small detectors have been studied sufficiently and show good performance in charged particle monitoring, etc., but usually they have low efficiency in radiation beams with large diameters or large radiation emission angles, and thus need more time to accumulate sufficient counts to ensure that the results meet the statistical requirements.…”

Section: Introductionmentioning

confidence: 99%

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The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Liu

Jin

Liu

et al. 2017

Sensors

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Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Liu

Jin

Liu

et al. 2017

Sensors

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“…Typically, background noise and gamma rays produce spurious counts that affect neutron counts [46], and the background noise was mainly introduced by the reverse leakage of the SiC diode and the backend readout electronics system. However, extensive experimental tests have shown that the energy deposited by gamma rays in the SiC detector region is less than 300 keV [30], [31], [32], [48], [49], while spurious counts introduced by background noise exist only in the energy range below 300 keV [31], [32], [46], [50], [51]. Hence, in this work, spurious counts can be completely prevented by setting the low-level discriminator (LLD) to 300 keV using the G4stepping class [39], [40].…”

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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In this article, we propose a double-trenchtype silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the doubletrench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials ( 10 B and 6 LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.

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Electrical Properties of MWCNT/HDPE Composite-Based MSM Structure Under Neutron Irradiation

Kasani

Khodabakhsh

Ahmadi

et al. 2017

Journal of Elec Materi

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Performance of a 4H-SiC Schottky diode as a compact sized detector for neutron pulse form measurements

Cited by 19 publications

References 5 publications

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Electrical Properties of MWCNT/HDPE Composite-Based MSM Structure Under Neutron Irradiation

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