Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Zhang, Lilong; Wang, Ying; Guo, Haomin; Hu, Hesuan; Liu, Yuntao; Chen, Size

doi:10.1109/jsen.2023.3238164

Cited by 4 publications

(2 citation statements)

References 48 publications

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“…A dual-energy detector was simulated, using Geant4 (version 10.07.p03) [10], to validate the model of the X-ray security scanner. The 128-pixel crystals were implemented using the G4Replica class [11,12]. This allowed us to differentiate the counts for each pixel.…”

Section: Jinst 19 C01050mentioning

confidence: 99%

Experimental validation of Monte Carlo simulation model for X-ray security scanner

Park,

An,

Yoon

et al. 2024

J. Inst.

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Transmission X-ray security scanners are deployed to detect smuggling of contraband articles, including weapons, narcotics, and explosives, for the purposes of homeland security. Current X-ray scanners use a fixed tube voltage (i.e., 160 kV); hence, they have a limitation in detecting thinly coated and/or low-density objects. To overcome this limitation, we are developing an X-ray scanner that applies variable tube voltage according to the physical/chemical properties of the object being inspected. To this end, in our previous study, Monte Carlo simulations with Geant4 (GEometry ANd Tracking4) and MCNP (Monte Carlo N Particle) were performed to optimize the design of the X-ray scanner for variable tube voltages. The MCNP was used to simulate the radiation generator for the X-ray source term, and the Geant4 was used to optimize the design of the dual-energy detector and to obtain the detector counts. In the present study, we experimentally validated the reliability of the Monte Carlo simulation model for the X-ray scanner. An 241Am source and a radiation generator were employed in this validation. For the 241Am source, the dual-energy detector signal was measured at a distance of 1 cm from the detector. In the case of the radiation generator, the source-to-object distance and the source-to-detector distance were 70 cm and 120 cm, respectively, as used in a typical X-ray security scanner. The tube voltage and the current were 140 kV and 10 mA, respectively. To obtain the X-ray images, the object was scanned while moving at a speed of 0.2 m/s on a conveyor system. The X-ray source term used in the simulation was obtained by monoenergetic-electron-beam bombardment onto the target. 4-D simulations were performed for the moving object. To validate the simulation model, we compared the simulated and measured image profiles, as well as the pixel counts of the dual-energy detector. The percent differences between the simulated and measured pixel counts and the image profiles were all within 5%. Thus, we concluded that our simulation model for the X-ray scanner can be considered to be reliable.

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Section: Jinst 19 C01050mentioning

confidence: 99%

Experimental validation of Monte Carlo simulation model for X-ray security scanner

Park,

An,

Yoon

et al. 2024

J. Inst.

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“…In the case of 3 He, its scarcity makes it unsuitable as a commonly used neutron conversion material. It's found that 10 B is a preferred choice of conversion materials since it has a thermal neutron absorption cross-section of 3840 barns for neutrons with an energy of 0.025 eV which is about four times higher than that of 6 Li [7,8]. The primary reaction between neutrons and 10 B is the 10 B(n,𝛼) 7 Li reaction, as shown in equation below.…”

Section: Introductionmentioning

confidence: 99%

The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252

Zhang,

Wu,

et al. 2023

J. Inst.

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After decades of discussions, it has been firmly established that detectors made of silicon-based semiconductor materials can be effectively used for neutron detection by simply coating them with suitable substances. The incident thermal neutrons interact with the coating neutron-sensitive materials such as 10B and 6LiF, resulting in the production of secondary charged particles which can be effectively detected in the sequencial silicon substrate. In this article, the detector system was designed with a coupled neutron detector structure which combined a silicon detector with a 10B4C film in various forms. The 10B4C layer was deposited on the substract with electron beam evaporation method. Two kinds of structrue were discussed: (1) one was the direct contact neutron detector by depositing 10B4C directly onto the front surface of silicon-based detectors; (2) the other was the coupled neutron detectors by depositing 10B4C onto substrates made from different materials such as Al and glass which then coupled with silicon-based detectors. The responses of these neutron detectors to neutrons (Cf-252) were measured individually. It's showen that the detection capability of direct contact neutron detectors was lower than the coupled neutron detectors. For the coupled detectors, the detector by depositing 10B4C on the aluminum substrate was found to be superior than that by depositing 10B4C on the glass substrate.

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A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Meng,

Han,

Ren

et al. 2024

Nuclear Instruments and Methods in Physics Research Section A:

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Cited by 4 publications

References 48 publications

Experimental validation of Monte Carlo simulation model for X-ray security scanner

Experimental validation of Monte Carlo simulation model for X-ray security scanner

The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Cited by 4 publications

References 48 publications

Experimental validation of Monte Carlo simulation model for X-ray security scanner

Experimental validation of Monte Carlo simulation model for X-ray security scanner

The response of an Al-10B4C coupled neutron detector based on PIPS technology to Cf-252

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

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The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252